material
CaGe2
ID:
mp-1024
DOI:
10.17188/1186841
Final Magnetic Moment0.000 μBCalculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit. |
Magnetic OrderingUnknown |
Formation Energy / Atom-0.480 eVCalculated formation energy from the elements normalized to per atom in the unit cell. |
Energy Above Hull / Atom0.010 eVThe energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures. |
Density4.26 g/cm3The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%) |
Decomposes ToCaGe2 |
Band Gap0.000 eVIn general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic. |
Hermann MauguinR3m [166] |
Hall-R 3 2" |
Point Group3m |
Crystal Systemtrigonal |
Band Structure
Density of States
sign indicates spin ↑ ↓
X-Ray Diffraction
-
Select radiation source:
- Cu
- Ag
- Mo
- Fe
Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)
X-Ray Absorption Spectra
Select an element to display a spectrum averaged over all sites of that element in the structure.
Apply Gaussian smoothing:
Download spectra for every symmetrically equivalent absorption site in the structure.
Download FEFF Input parameters.
Substrates
Reference for minimal coincident interface area (MCIA) and elastic energy:substrate orientation:
| substrate material | substrate orientation | film orientation | MCIA† [Å2] |
|---|---|---|---|
| LaAlO3 (mp-2920) | <0 0 1> | <0 0 1> | 100.0 |
| LaAlO3 (mp-2920) | <1 0 1> | <0 0 1> | 228.6 |
| AlN (mp-661) | <0 0 1> | <0 0 1> | 57.2 |
| AlN (mp-661) | <1 0 0> | <0 0 1> | 142.9 |
| AlN (mp-661) | <1 0 1> | <0 0 1> | 242.9 |
| CeO2 (mp-20194) | <1 0 0> | <0 0 1> | 300.1 |
| GaAs (mp-2534) | <1 0 0> | <0 0 1> | 228.6 |
| CeO2 (mp-20194) | <1 1 0> | <0 0 1> | 285.8 |
| GaAs (mp-2534) | <1 1 0> | <0 0 1> | 228.6 |
| GaAs (mp-2534) | <1 1 1> | <0 0 1> | 57.2 |
| BaF2 (mp-1029) | <1 1 1> | <0 0 1> | 271.5 |
| BaF2 (mp-1029) | <1 0 0> | <0 0 1> | 357.3 |
| GaN (mp-804) | <0 0 1> | <0 0 1> | 171.5 |
| GaN (mp-804) | <1 0 1> | <0 0 1> | 214.4 |
| GaN (mp-804) | <1 1 1> | <0 0 1> | 271.5 |
| GaN (mp-804) | <1 0 0> | <0 0 1> | 214.4 |
| GaN (mp-804) | <1 1 0> | <0 0 1> | 300.1 |
| SiO2 (mp-6930) | <1 1 1> | <0 0 1> | 257.2 |
| KCl (mp-23193) | <1 0 0> | <0 0 1> | 328.7 |
| KCl (mp-23193) | <1 1 1> | <0 0 1> | 271.5 |
| SiO2 (mp-6930) | <0 0 1> | <0 0 1> | 185.8 |
| SiO2 (mp-6930) | <1 0 1> | <0 0 1> | 314.4 |
| InAs (mp-20305) | <1 1 1> | <0 0 1> | 271.5 |
| KTaO3 (mp-3614) | <1 1 0> | <0 0 1> | 114.3 |
| KTaO3 (mp-3614) | <1 1 1> | <0 0 1> | 185.8 |
| DyScO3 (mp-31120) | <0 0 1> | <0 0 1> | 300.1 |
| DyScO3 (mp-31120) | <1 0 0> | <0 0 1> | 228.6 |
| InAs (mp-20305) | <1 0 0> | <0 0 1> | 300.1 |
| InAs (mp-20305) | <1 1 0> | <0 0 1> | 214.4 |
| ZnSe (mp-1190) | <1 0 0> | <0 0 1> | 228.6 |
| ZnSe (mp-1190) | <1 1 0> | <0 0 1> | 228.6 |
| ZnSe (mp-1190) | <1 1 1> | <0 0 1> | 57.2 |
| KTaO3 (mp-3614) | <1 0 0> | <0 0 1> | 114.3 |
| CdS (mp-672) | <1 0 1> | <0 0 1> | 228.6 |
| LiF (mp-1138) | <1 1 0> | <0 0 1> | 114.3 |
| CdS (mp-672) | <0 0 1> | <0 0 1> | 185.8 |
| CdS (mp-672) | <1 0 0> | <0 0 1> | 271.5 |
| CdS (mp-672) | <1 1 0> | <0 0 1> | 257.2 |
| LiF (mp-1138) | <1 0 0> | <0 0 1> | 114.3 |
| LiF (mp-1138) | <1 1 1> | <0 0 1> | 271.5 |
| Te2W (mp-22693) | <0 0 1> | <0 0 1> | 200.1 |
| YVO4 (mp-19133) | <1 0 0> | <0 0 1> | 185.8 |
| Te2W (mp-22693) | <0 1 0> | <0 0 1> | 214.4 |
| TePb (mp-19717) | <1 1 1> | <0 0 1> | 228.6 |
| YVO4 (mp-19133) | <0 0 1> | <0 0 1> | 257.2 |
| YVO4 (mp-19133) | <1 0 1> | <0 0 1> | 200.1 |
| Te2Mo (mp-602) | <0 0 1> | <0 0 1> | 42.9 |
| Te2Mo (mp-602) | <1 0 0> | <0 0 1> | 214.4 |
| Te2Mo (mp-602) | <1 0 1> | <0 0 1> | 214.4 |
| Ag (mp-124) | <1 1 0> | <0 0 1> | 171.5 |
Elasticity
A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.
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Similar Structures
Explanation of dissimilarity measure: Documentation.| material | dissimilarity | Ehull | # of elements |
|---|---|---|---|
| CaGe2 (mp-13286) | 0.2075 | 0.007 | 2 |
| CaSi2 (mp-2700) | 0.5123 | 0.000 | 2 |
| CaGe2 (mp-567456) | 0.3799 | 0.000 | 2 |
| CaSi2 (mp-2699) | 0.4100 | 0.001 | 2 |
| B3Ru2 (mp-13854) | 0.5063 | 0.000 | 2 |
| Ni2SbTe2 (mp-3250) | 0.5921 | 0.000 | 3 |
| KSnSb (mp-3486) | 0.4876 | 0.000 | 3 |
| KSnAs (mp-3481) | 0.6503 | 0.000 | 3 |
| NaSnSb (mp-952566) | 0.4825 | 0.000 | 3 |
| NaSnP (mp-29529) | 0.5882 | 0.000 | 3 |
Calculation Summary
Structure Optimization
Run TypeGGA |
Energy Cutoff520 eV |
# of K-points28 |
U Values-- |
PseudopotentialsVASP PAW: Ca_sv Ge_d |
Final Energy/Atom-4.2282 eV |
Corrected Energy-25.3694 eV
-25.3694 eV = -25.3694 eV (uncorrected energy)
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Detailed input parameters and outputs for all calculations
ICSD IDs
- 110107
- 245612
Submitted by
Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)