material

In2AgSe4
ID:

mp-1025331
DOI:

10.17188/1355228

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
Non-magnetic
Formation Energy / Atom
-0.346 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.090 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
5.21 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
Se + InAgSe2 + In2Se3
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
I4 [82]
Hall
I 4
Point Group
4
Crystal System
tetragonal
We have not yet calculated a detailed bandstructure for this material
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
C (mp-48) <1 0 1> <0 0 1> 214.2
CeO2 (mp-20194) <1 0 0> <0 0 1> 142.8
GaAs (mp-2534) <1 0 0> <0 0 1> 285.6
BaF2 (mp-1029) <1 0 0> <0 0 1> 321.3
SiO2 (mp-6930) <0 0 1> <0 0 1> 107.1
SiO2 (mp-6930) <1 1 1> <1 0 1> 156.7
DyScO3 (mp-31120) <1 1 0> <0 0 1> 321.3
InAs (mp-20305) <1 0 0> <0 0 1> 321.3
ZnSe (mp-1190) <1 0 0> <0 0 1> 285.6
KTaO3 (mp-3614) <1 0 0> <0 0 1> 142.8
CdWO4 (mp-19387) <0 1 1> <1 0 0> 278.9
Ni (mp-23) <1 0 0> <1 0 1> 235.0
GaSe (mp-1943) <1 1 0> <1 0 1> 235.0
BN (mp-984) <1 1 0> <1 0 1> 313.4
Bi2Se3 (mp-541837) <1 0 0> <0 0 1> 249.9
TeO2 (mp-2125) <0 0 1> <0 0 1> 285.6
SiC (mp-7631) <0 0 1> <0 0 1> 285.6
Fe3O4 (mp-19306) <1 0 0> <0 0 1> 71.4
MgO (mp-1265) <1 1 1> <0 0 1> 249.9
TiO2 (mp-2657) <0 0 1> <0 0 1> 178.5
TiO2 (mp-2657) <1 1 0> <1 0 1> 78.3
Mg (mp-153) <1 0 0> <0 0 1> 178.5
Mg (mp-153) <1 1 0> <1 0 1> 313.4
Mg (mp-153) <1 1 1> <0 0 1> 285.6
PbSe (mp-2201) <1 0 0> <0 0 1> 321.3
Al2O3 (mp-1143) <1 0 0> <1 0 1> 313.4
PbS (mp-21276) <1 0 0> <0 0 1> 35.7
GaN (mp-804) <0 0 1> <0 0 1> 357.0
GaN (mp-804) <1 0 0> <0 0 1> 178.5
GaN (mp-804) <1 0 1> <0 0 1> 214.2
GaN (mp-804) <1 1 1> <0 0 1> 285.6
CdS (mp-672) <0 0 1> <0 0 1> 249.9
CdS (mp-672) <1 0 0> <0 0 1> 178.5
C (mp-48) <0 0 1> <0 0 1> 249.9
C (mp-48) <1 1 0> <0 0 1> 321.3
AlN (mp-661) <0 0 1> <0 0 1> 178.5
SiO2 (mp-6930) <1 1 0> <0 0 1> 142.8
KCl (mp-23193) <1 0 0> <0 0 1> 321.3
KCl (mp-23193) <1 1 0> <1 0 1> 235.0
InP (mp-20351) <1 0 0> <0 0 1> 35.7
InP (mp-20351) <1 1 0> <1 1 0> 98.6
Te2W (mp-22693) <0 1 1> <1 0 1> 235.0
CdWO4 (mp-19387) <0 0 1> <1 0 1> 156.7
CdWO4 (mp-19387) <1 0 0> <1 0 1> 156.7
CdWO4 (mp-19387) <1 0 1> <0 0 1> 178.5
CdWO4 (mp-19387) <1 1 0> <1 1 1> 209.8
TePb (mp-19717) <1 0 0> <0 0 1> 178.5
LiAlO2 (mp-3427) <0 0 1> <1 0 0> 139.5
LiAlO2 (mp-3427) <1 0 0> <0 0 1> 357.0
LiAlO2 (mp-3427) <1 1 1> <0 0 1> 285.6
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.

Once you have registered you can also "vote" for full calculation of this material's elastic properties.

Similar Structures

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
ZnCu4(SnSe4)2 (mvc-14983) 0.6053 0.021 4
ZnAgPS4 (mp-558807) 0.5014 0.000 4
CaZnSO (mp-7204) 0.2653 0.011 4
LiZnPS4 (mp-11175) 0.6793 0.000 4
LiVBO4 (mp-770986) 0.6719 0.088 4
Ge3As4 (mp-569600) 0.4544 0.050 2
SiAs2 (mp-978553) 0.5680 0.000 2
Si3As4 (mp-570744) 0.3647 0.072 2
As4C3 (mp-568505) 0.1977 0.873 2
C3N4 (mp-571653) 0.4027 0.489 2
Zn(GaTe2)2 (mp-15777) 0.0956 0.000 3
Cd(InSe2)2 (mp-22304) 0.0555 0.000 3
In2HgTe4 (mp-19765) 0.1043 0.000 3
In2HgSe4 (mp-20731) 0.0721 0.000 3
Cd(InTe2)2 (mp-21374) 0.0734 0.000 3
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Calculation Summary

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
36
U Values
--
Pseudopotentials
VASP PAW: In_d Ag Se
Final Energy/Atom
-3.5225 eV
Corrected Energy
-24.6572 eV
-24.6572 eV = -24.6572 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

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User remarks:
  • Pauling file
  • MP user submission

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)