material

MgSnN2
ID:

mp-1029791
Tags: CNGMD Nitrides

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-0.545 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.000 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
4.96 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
Stable
Band Gap
1.062 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Pna21 [33]
Hall
P 2c 2n
Point Group
mm2
Crystal System
orthorhombic

Electronic Structure

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
substrate material substrate orientation film orientation elastic energy [meV] MCIA† [Å2]
GdScO3 (mp-5690) <0 0 1> <0 1 0> 0.007 192.1
Ge (mp-32) <1 1 0> <1 1 0> 0.009 282.4
MgAl2O4 (mp-3536) <1 1 0> <1 1 0> 0.012 282.4
LiNbO3 (mp-3731) <0 0 1> <1 0 0> 0.015 165.6
MgF2 (mp-1249) <0 0 1> <1 0 1> 0.020 264.8
CaF2 (mp-2741) <1 0 0> <0 1 1> 0.020 152.0
GaP (mp-2490) <1 0 0> <0 1 1> 0.022 152.0
GaAs (mp-2534) <1 1 0> <1 1 0> 0.033 282.4
InP (mp-20351) <1 0 0> <1 0 1> 0.033 105.9
GdScO3 (mp-5690) <0 1 1> <0 0 1> 0.040 165.1
ZrO2 (mp-2858) <0 1 0> <1 1 1> 0.043 196.3
BaF2 (mp-1029) <1 0 0> <1 0 1> 0.044 158.9
SrTiO3 (mp-4651) <1 0 0> <0 0 1> 0.045 132.1
LiTaO3 (mp-3666) <0 0 1> <1 0 0> 0.046 165.6
Ni (mp-23) <1 1 1> <0 1 0> 0.046 192.1
Mg (mp-153) <0 0 1> <1 0 0> 0.050 165.6
CdWO4 (mp-19387) <1 0 0> <1 0 0> 0.050 124.2
Al (mp-134) <1 1 0> <1 0 0> 0.051 207.0
Mg (mp-153) <1 0 1> <0 0 1> 0.051 132.1
NdGaO3 (mp-3196) <1 1 0> <0 1 1> 0.052 303.9
BaTiO3 (mp-5986) <0 0 1> <1 0 1> 0.058 158.9
Mg (mp-153) <1 1 0> <0 1 0> 0.059 115.2
ZnSe (mp-1190) <1 1 0> <1 1 0> 0.060 282.4
C (mp-48) <1 0 0> <1 0 1> 0.063 211.8
CdWO4 (mp-19387) <1 0 1> <0 0 1> 0.066 132.1
GdScO3 (mp-5690) <0 1 0> <0 0 1> 0.069 132.1
GaSe (mp-1943) <0 0 1> <1 0 0> 0.070 165.6
GaN (mp-804) <1 1 1> <0 1 0> 0.074 153.6
SiO2 (mp-6930) <1 0 0> <0 0 1> 0.082 165.1
C (mp-66) <1 1 0> <0 0 1> 0.088 198.1
YAlO3 (mp-3792) <0 1 1> <1 0 0> 0.090 289.8
TiO2 (mp-2657) <1 1 1> <0 1 1> 0.091 202.6
MgO (mp-1265) <1 1 1> <1 0 0> 0.091 124.2
TbScO3 (mp-31119) <0 1 0> <0 0 1> 0.102 132.1
MoS2 (mp-1434) <0 0 1> <1 0 0> 0.105 165.6
Te2W (mp-22693) <0 1 1> <0 1 0> 0.105 115.2
WS2 (mp-224) <0 0 1> <1 0 0> 0.105 165.6
CdWO4 (mp-19387) <1 1 1> <0 1 0> 0.107 153.6
Au (mp-81) <1 1 0> <0 0 1> 0.107 99.1
GaN (mp-804) <1 1 0> <0 1 0> 0.109 115.2
BN (mp-984) <1 0 0> <1 1 1> 0.110 327.1
SiC (mp-11714) <1 0 0> <0 1 1> 0.111 253.3
TeO2 (mp-2125) <0 0 1> <0 1 0> 0.113 192.1
ZrO2 (mp-2858) <1 1 1> <1 0 0> 0.113 207.0
NdGaO3 (mp-3196) <0 1 1> <0 0 1> 0.116 264.2
LiAlO2 (mp-3427) <1 0 1> <1 1 0> 0.118 169.4
CsI (mp-614603) <1 1 0> <0 0 1> 0.122 264.2
C (mp-48) <0 0 1> <0 1 0> 0.129 192.1
SiC (mp-11714) <0 0 1> <0 1 1> 0.129 303.9
SiC (mp-7631) <0 0 1> <0 1 1> 0.136 303.9
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
215 90 70 0 0 0
90 203 72 0 0 0
70 72 204 0 0 0
0 0 0 59 0 0
0 0 0 0 55 0
0 0 0 0 0 63
Compliance Tensor Sij (10-12Pa-1)
6 -2.2 -1.3 0 0 0
-2.2 6.4 -1.5 0 0 0
-1.3 -1.5 5.9 0 0 0
0 0 0 17 0 0
0 0 0 0 18.3 0
0 0 0 0 0 15.9
Shear Modulus GV
61 GPa
Bulk Modulus KV
120 GPa
Shear Modulus GR
61 GPa
Bulk Modulus KR
120 GPa
Shear Modulus GVRH
61 GPa
Bulk Modulus KVRH
120 GPa
Elastic Anisotropy
0.04
Poisson's Ratio
0.28

Piezoelectricity

Reference for tensor and properties: Methodology
Piezoelectric Tensor eij (C/m2)
0.00000 0.00000 0.00000 0.00000 -0.40824 0.00000
0.00000 0.00000 0.00000 -0.27481 0.00000 0.00000
-0.55429 -0.63077 1.27970 0.00000 0.00000 0.00000
Piezoelectric Modulus ‖eij‖max
1.53060 C/m2
Crystallographic Direction vmax
0.00000
1.00000
0.00000

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij∞ (electronic contribution)
6.36 0.00 0.00
0.00 6.04 0.00
0.00 0.00 6.61
Dielectric Tensor εij (total)
10.31 0.00 0.00
0.00 9.70 0.00
0.00 0.00 11.51
Polycrystalline dielectric constant εpoly∞
(electronic contribution)
6.34
Polycrystalline dielectric constant εpoly
(total)
10.51
Refractive Index n
2.52
Potentially ferroelectric?
Unknown

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
BeSiN2 (mp-7913) 0.1115 0.000 3
MnZn4O5 (mp-774024) 0.1154 0.008 3
LiInSe2 (mp-20310) 0.1246 0.001 3
ZnSnN2 (mp-1029469) 0.1042 0.000 3
Zn2SbN3 (mp-1029334) 0.1115 0.006 3
LiCo7O7F (mp-764039) 0.1932 0.061 4
LiCo5O5F (mp-764225) 0.2246 0.069 4
Li2ZnSnS4 (mp-555186) 0.1720 0.000 4
ZnGaNO (mp-558481) 0.2208 0.058 4
ZnGa3N3O (mp-555777) 0.2419 5.250 4
CuH (mp-24093) 0.0676 0.062 2
MnS (mp-2562) 0.0713 0.082 2
AlN (mp-661) 0.0638 0.000 2
AgI (mp-22894) 0.0729 0.001 2
AgH (mp-1096804) 0.0666 0.134 2
Ge (mp-1007760) 0.1675 0.022 1
Si (mp-165) 0.1726 0.013 1
C (mp-611426) 0.2990 0.146 1
C (mp-47) 0.1783 0.162 1
Ge (mp-1091415) 0.3005 0.014 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Mg_pv Sn_d N
Final Energy/Atom
-5.9239 eV
Corrected Energy
-94.7823 eV
-94.7823 eV = -94.7823 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

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User remarks:
  • CNGMD Nitrides

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)