Tags: MnSb2Se4 HgBi2S4

Material Details

Final Magnetic Moment
5.001 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.

Magnetic Ordering
Formation Energy / Atom
-0.580 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.000 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

5.36 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
Band Gap
0.393 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
C2/m [12]
-C 2y
Point Group
Crystal System
We have not yet calculated a detailed bandstructure for this material

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)


A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.

Once you have registered you can also "vote" for full calculation of this material's elastic properties.

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij (electronic contribution)
12.42 -0.00 0.34
-0.00 18.59 -0.00
0.34 -0.00 15.66
Dielectric Tensor εij (total)
23.80 -0.00 0.01
-0.00 73.39 -0.00
0.01 -0.00 40.88
Polycrystalline dielectric constant εpoly
(electronic contribution)
Polycrystalline dielectric constant εpoly
Refractive Index n
Potentially ferroelectric?

Calculation Summary

Structure Optimization

Run Type
Energy Cutoff
700 eV
# of K-points
U Values
VASP PAW: Mn_pv Sb Se
Final Energy/Atom
-4.7963 eV
Corrected Energy
-70.9239 eV
Uncorrected energy = -67.1479 eV Composition-based energy adjustment (-0.472 eV/atom x 8.0 atoms) = -3.7760 eV Corrected energy = -70.9239 eV

Detailed input parameters and outputs for all calculations

Show JSON History Show BibTex Citation Download BibTex Citation
Submitted by
User remarks:
  • sample prepared from MnSe, Sb2Se3, single crystal (determination of cell parameters)
  • MnSb2Se4
  • HgBi2S4

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)