material

TaN
ID:

mp-1497
DOI:

10.17188/1190977

Tags: Tantalum nitride - epsilon Tantalum(III) nitride High pressure experimental phase Tantalum nitride (1/1) Tantalum nitride

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
Non-magnetic
Formation Energy / Atom
-0.918 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.447 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
13.81 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
TaN
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
P6/mmm [191]
Hall
-P 6 2
Point Group
6/mmm
Crystal System
hexagonal

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 24.0
LaAlO3 (mp-2920) <1 0 0> <1 0 0> 138.9
LaAlO3 (mp-2920) <1 0 1> <0 0 1> 72.0
LaAlO3 (mp-2920) <1 1 0> <1 1 0> 240.5
LaAlO3 (mp-2920) <1 1 1> <0 0 1> 119.9
AlN (mp-661) <0 0 1> <1 0 1> 142.6
AlN (mp-661) <1 0 0> <1 1 0> 106.9
AlN (mp-661) <1 0 1> <1 0 0> 123.4
AlN (mp-661) <1 1 0> <1 0 0> 77.1
AlN (mp-661) <1 1 1> <1 0 0> 108.0
CeO2 (mp-20194) <1 1 0> <1 1 1> 215.5
CeO2 (mp-20194) <1 1 1> <0 0 1> 215.9
GaAs (mp-2534) <1 0 0> <1 0 0> 308.6
GaAs (mp-2534) <1 1 0> <1 0 0> 339.4
GaAs (mp-2534) <1 1 1> <0 0 1> 167.9
BaF2 (mp-1029) <1 0 0> <1 1 0> 80.2
BaF2 (mp-1029) <1 1 0> <1 0 0> 231.4
BaF2 (mp-1029) <1 1 1> <0 0 1> 72.0
GaN (mp-804) <0 0 1> <0 0 1> 167.9
GaN (mp-804) <1 0 0> <1 0 0> 138.9
GaN (mp-804) <1 0 1> <1 1 0> 213.8
GaN (mp-804) <1 1 0> <0 0 1> 143.9
GaN (mp-804) <1 1 1> <1 1 0> 187.1
SiO2 (mp-6930) <0 0 1> <1 1 1> 287.3
SiO2 (mp-6930) <1 0 0> <1 0 0> 308.6
SiO2 (mp-6930) <1 0 1> <1 0 0> 246.8
SiO2 (mp-6930) <1 1 0> <1 1 0> 187.1
KCl (mp-23193) <1 0 0> <1 1 0> 80.2
KCl (mp-23193) <1 1 0> <1 0 0> 231.4
KCl (mp-23193) <1 1 1> <0 0 1> 72.0
DyScO3 (mp-31120) <0 0 1> <1 1 0> 160.3
DyScO3 (mp-31120) <0 1 0> <1 0 1> 85.6
DyScO3 (mp-31120) <0 1 1> <1 0 1> 313.7
DyScO3 (mp-31120) <1 0 0> <1 0 0> 262.3
DyScO3 (mp-31120) <1 0 1> <1 0 0> 277.7
DyScO3 (mp-31120) <1 1 0> <1 0 1> 256.7
DyScO3 (mp-31120) <1 1 1> <1 1 0> 293.9
InAs (mp-20305) <1 0 0> <1 0 0> 262.3
InAs (mp-20305) <1 1 0> <1 0 0> 262.3
ZnSe (mp-1190) <1 0 0> <1 0 0> 308.6
ZnSe (mp-1190) <1 1 0> <1 0 0> 339.4
ZnSe (mp-1190) <1 1 1> <0 0 1> 167.9
KTaO3 (mp-3614) <1 0 0> <1 1 0> 80.2
KTaO3 (mp-3614) <1 1 0> <1 1 1> 179.6
KTaO3 (mp-3614) <1 1 1> <1 1 0> 267.2
CdS (mp-672) <0 0 1> <1 0 1> 228.2
CdS (mp-672) <1 0 0> <1 0 0> 231.4
CdS (mp-672) <1 0 1> <1 0 0> 262.3
CdS (mp-672) <1 1 1> <1 0 0> 154.3
LiF (mp-1138) <1 0 0> <1 0 0> 154.3
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
378 190 177 0 0 0
190 378 177 0 0 0
177 177 711 0 0 0
0 0 0 179 0 0
0 0 0 0 179 0
0 0 0 0 0 94
Compliance Tensor Sij (10-12Pa-1)
3.7 -1.6 -0.5 0 0 0
-1.6 3.7 -0.5 0 0 0
-0.5 -0.5 1.7 0 0 0
0 0 0 5.6 0 0
0 0 0 0 5.6 0
0 0 0 0 0 10.7
Shear Modulus GV
152 GPa
Bulk Modulus KV
284 GPa
Shear Modulus GR
133 GPa
Bulk Modulus KR
266 GPa
Shear Modulus GVRH
143 GPa
Bulk Modulus KVRH
275 GPa
Elastic Anisotropy
0.75
Poisson's Ratio
0.28

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
Ta2TiN3 (mp-1019270) 0.0723 0.479 3
Hf2TaN3 (mp-1018710) 0.1256 0.504 3
ZrTa2N3 (mp-1071766) 0.1094 0.336 3
TaTi2N3 (mp-1019273) 0.1780 0.528 3
HfTa2N3 (mp-1018718) 0.1527 0.404 3
TaN (mp-570454) 0.2629 1.319 2
TaN2 (mp-1019271) 0.3996 0.965 2
TlPt (mp-11553) 0.1328 0.604 2
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1016/j.actamat.2014.03.015
Three model alloys, referred to as TaC, TaN and VN, were cast using vacuum induction melting (VIM) by Sophisticated Alloys, Inc. The ingots (4.5kg each) were hot forged and rolled to 20mm slabs fol [...]
10.1016/j.mee.2011.03.022
TaN and TiN have been deposited on 8in. silicon wafers by physical vapor deposition (PVD) and chemical vapor deposition (CVD) technique, respectively. SrTiO3 and Al2O3 layers were deposited by atomic [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition TaN.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: N Ta_pv
Final Energy/Atom
-10.8216 eV
Corrected Energy
-64.9294 eV
-64.9294 eV = -64.9294 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

Show JSON History Show BibTex Citation Download BibTex Citation
ICSD IDs
  • 186417
  • 644706
  • 182348
  • 25659
Submitted by
User remarks:
  • High pressure experimental phase
  • Tantalum nitride

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)