material

C(ClF)2

ID:

mp-22966

DOI:

10.17188/1199122


Tags: Dichlorodifluoromethane

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.

Magnetic Ordering
NM
Formation Energy / Atom
-1.402 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.015 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
1.78 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
CCl4 + CF4
Band Gap
5.738 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Fdd2 [43]
Hall
F 2 2d
Point Group
mm2
Crystal System
orthorhombic

Electronic Structure

Topological data for ICSD ID 33946 from Topological Materials Database
Topological Classification
trivial*
Subclassification
LCEBR
* trivial insulator or metal
Linear Combination of Elementary Band Representations

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
substrate material substrate orientation film orientation elastic energy [meV] MCIA [Å2]
Mg (mp-153) <1 0 1> <1 1 0> 0.000 189.2
InP (mp-20351) <1 0 0> <0 0 1> 0.000 283.8
Ge3(BiO3)4 (mp-23560) <1 0 0> <0 0 1> 0.000 113.5
GdScO3 (mp-5690) <1 1 0> <0 1 0> 0.001 255.7
TbScO3 (mp-31119) <1 1 0> <0 1 0> 0.001 255.7
KP(HO2)2 (mp-23959) <0 0 1> <0 0 1> 0.001 227.1
BaTiO3 (mp-5986) <0 0 1> <0 1 0> 0.001 255.7
Au (mp-81) <1 0 0> <0 0 1> 0.001 227.1
SiC (mp-7631) <0 0 1> <0 0 1> 0.001 283.8
KP(HO2)2 (mp-23959) <1 0 0> <0 0 1> 0.001 113.5
SiC (mp-11714) <0 0 1> <0 0 1> 0.001 283.8
KP(HO2)2 (mp-23959) <0 1 0> <0 0 1> 0.001 227.1
DyScO3 (mp-31120) <1 1 0> <0 1 0> 0.002 255.7
Ag (mp-124) <1 0 0> <0 0 1> 0.002 227.1
C (mp-48) <0 0 1> <0 0 1> 0.002 227.1
LaAlO3 (mp-2920) <1 0 0> <0 0 1> 0.002 283.8
GaN (mp-804) <1 0 1> <1 1 0> 0.003 189.2
C (mp-66) <1 0 0> <0 0 1> 0.003 113.5
WSe2 (mp-1821) <1 0 1> <0 1 0> 0.003 255.7
AlN (mp-661) <1 1 1> <0 0 1> 0.003 56.8
PbS (mp-21276) <1 0 0> <0 0 1> 0.004 283.8
NaCl (mp-22862) <1 0 0> <0 1 0> 0.005 255.7
Te2Mo (mp-602) <0 0 1> <0 0 1> 0.005 227.1
Ga2O3 (mp-886) <0 1 0> <0 0 1> 0.005 283.8
ZrO2 (mp-2858) <1 0 -1> <0 1 0> 0.005 255.7
YAlO3 (mp-3792) <1 1 0> <0 1 0> 0.006 170.5
Te2W (mp-22693) <0 1 1> <1 0 1> 0.006 178.2
TiO2 (mp-2657) <1 0 1> <0 0 1> 0.006 227.1
SiC (mp-11714) <1 0 0> <0 0 1> 0.006 340.6
GaTe (mp-542812) <1 0 0> <1 0 1> 0.006 178.2
MgF2 (mp-1249) <1 0 0> <0 0 1> 0.007 340.6
KTaO3 (mp-3614) <1 0 0> <0 1 0> 0.007 255.7
BN (mp-984) <0 0 1> <0 0 1> 0.007 283.8
Mg (mp-153) <1 1 0> <0 1 1> 0.007 204.8
TiO2 (mp-390) <0 0 1> <0 0 1> 0.007 56.8
AlN (mp-661) <0 0 1> <0 1 0> 0.008 85.2
MgO (mp-1265) <1 0 0> <0 0 1> 0.008 283.8
ZrO2 (mp-2858) <1 0 0> <0 0 1> 0.008 56.8
GaN (mp-804) <1 0 0> <0 1 0> 0.009 85.2
CdWO4 (mp-19387) <1 0 0> <1 1 0> 0.009 189.2
Mg (mp-153) <1 0 0> <0 0 1> 0.009 170.3
LaF3 (mp-905) <1 0 1> <0 0 1> 0.009 283.8
LaAlO3 (mp-2920) <0 0 1> <0 1 1> 0.009 102.4
ZnO (mp-2133) <1 1 0> <0 0 1> 0.009 340.6
LiAlO2 (mp-3427) <1 0 1> <0 0 1> 0.010 170.3
Te2Mo (mp-602) <1 0 1> <0 1 0> 0.010 170.5
BN (mp-984) <1 1 0> <0 0 1> 0.010 170.3
YAlO3 (mp-3792) <0 1 1> <0 0 1> 0.010 340.6
YAlO3 (mp-3792) <0 0 1> <0 0 1> 0.010 56.8
DyScO3 (mp-31120) <0 0 1> <0 0 1> 0.011 283.8
Up to 50 entries displayed.
minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Stiffness Tensor Cij (GPa)
3 2 2 0 0 0
2 4 2 0 0 0
2 2 4 0 0 0
0 0 0 1 0 0
0 0 0 0 1 0
0 0 0 0 0 1
Compliance Tensor Sij (10-12Pa-1)
576.9 -192 -158.9 0 0 0
-192 361.7 -103.9 0 0 0
-158.9 -103.9 397.3 0 0 0
0 0 0 749.8 0 0
0 0 0 0 828 0
0 0 0 0 0 861.2
Shear Modulus GV
1 GPa
Bulk Modulus KV
2 GPa
Shear Modulus GR
1 GPa
Bulk Modulus KR
2 GPa
Shear Modulus GVRH
1 GPa
Bulk Modulus KVRH
2 GPa
Elastic Anisotropy
0.34
Poisson's Ratio
0.31

Piezoelectricity

Reference for tensor and properties: Methodology
Piezoelectric Tensor eij (C/m2)
0.00000 0.00000 0.00000 0.00000 0.02431 0.00000
0.00000 0.00000 0.00000 0.00000 0.00000 0.00000
-0.04380 -0.04321 -0.03322 0.00000 0.00000 0.00000
Piezoelectric Modulus ‖eijmax
0.06993 C/m2
Crystallographic Direction vmax
0.00000
1.00000
-0.00000

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij (electronic contribution)
2.17 0.00 -0.00
0.00 1.93 0.00
-0.00 0.00 1.95
Dielectric Tensor εij (total)
2.67 0.00 -0.00
0.00 2.44 0.00
-0.00 0.00 2.18
Polycrystalline dielectric constant εpoly
(electronic contribution)
2.02
Polycrystalline dielectric constant εpoly
(total)
2.43
Refractive Index n
1.42
Potentially ferroelectric?
Unknown

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
SiH3F (mp-28289) 0.3913 0.024 3
S(ClO)2 (mp-28405) 0.3710 0.000 3
CCl3F (mp-23071) 0.4499 0.012 3
Cr(ClO)2 (mp-1079620) 0.2516 0.173 3
VOF3 (mp-764269) 0.4311 0.025 3
PHSF2 (mp-642795) 0.5500 0.000 4
H10C3IN (mp-567221) 0.5483 0.091 4
BH8CN (mp-567989) 0.4711 0.110 4
PCl2OF (mp-557522) 0.3246 0.000 4
SiC(ClF)3 (mp-554491) 0.5063 0.311 4
H2C (mp-985782) 0.3376 0.044 2
SiH4 (mp-23739) 0.4724 0.005 2
SiCl2 (mp-29174) 0.4262 0.061 2
CBr4 (mp-680422) 0.4695 0.210 2
CCl4 (mp-1004532) 0.4603 0.000 2
H24C8S(NO2)2 (mp-707249) 0.6138 0.143 5
H10C3NClO4 (mp-554570) 0.6325 0.586 5
LiAlH16(CN)4 (mp-698470) 0.5702 0.117 5
H12C4NClO4 (mp-24767) 0.6121 0.554 5
H10C3NClO4 (mp-560498) 0.5977 0.586 5
BH11C4NClF4 (mp-559235) 0.6809 0.113 6
BH11C4BrNF4 (mp-554318) 0.6888 0.111 6
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: C Cl F
Final Energy/Atom
-4.3167 eV
Corrected Energy
-43.1670 eV
-43.1670 eV = -43.1670 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations


Show JSON History Show BibTex Citation Download BibTex Citation
ICSD IDs
  • 33948
  • 33946
  • 33947
Submitted by
User remarks:
  • Dichlorodifluoromethane

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)