material
ErGa2
ID:
mp-2422
DOI:
10.17188/1199984
Final Magnetic Moment-0.000 μBCalculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit. |
Magnetic OrderingUnknown |
Formation Energy / Atom-0.609 eVCalculated formation energy from the elements normalized to per atom in the unit cell. |
Energy Above Hull / Atom0.000 eVThe energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures. |
Density8.21 g/cm3The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%) |
Decomposes ToStable |
Band Gap0.000 eVIn general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic. |
Hermann MauguinP6/mmm [191] |
Hall-P 6 2 |
Point Group6/mmm |
Crystal Systemhexagonal |
Band Structure
Density of States
sign indicates spin ↑ ↓
X-Ray Diffraction
-
Select radiation source:
- Cu
- Ag
- Mo
- Fe
Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)
X-Ray Absorption Spectra
Select an element to display a spectrum averaged over all sites of that element in the structure.
Apply Gaussian smoothing:
Download spectra for every symmetrically equivalent absorption site in the structure.
Download FEFF Input parameters.
Substrates
Reference for minimal coincident interface area (MCIA) and elastic energy:substrate orientation:
| substrate material | substrate orientation | film orientation | MCIA† [Å2] |
|---|---|---|---|
| AlN (mp-661) | <0 0 1> | <0 0 1> | 61.0 |
| AlN (mp-661) | <1 1 0> | <1 0 1> | 160.3 |
| CeO2 (mp-20194) | <1 0 0> | <1 0 0> | 153.6 |
| CeO2 (mp-20194) | <1 1 1> | <0 0 1> | 198.4 |
| LaAlO3 (mp-2920) | <0 0 1> | <0 0 1> | 106.8 |
| LaAlO3 (mp-2920) | <1 0 1> | <1 1 0> | 236.5 |
| GaAs (mp-2534) | <1 0 0> | <1 1 0> | 236.5 |
| GaAs (mp-2534) | <1 1 0> | <1 0 0> | 136.6 |
| GaAs (mp-2534) | <1 1 1> | <1 0 0> | 170.7 |
| AlN (mp-661) | <1 0 0> | <1 0 1> | 160.3 |
| AlN (mp-661) | <1 0 1> | <1 0 1> | 160.3 |
| AlN (mp-661) | <1 1 1> | <1 0 1> | 114.5 |
| CeO2 (mp-20194) | <1 1 0> | <1 0 1> | 251.9 |
| BaF2 (mp-1029) | <1 0 0> | <0 0 1> | 320.5 |
| BaF2 (mp-1029) | <1 1 0> | <0 0 1> | 228.9 |
| BaF2 (mp-1029) | <1 1 1> | <0 0 1> | 198.4 |
| GaN (mp-804) | <1 0 0> | <1 1 0> | 266.1 |
| GaN (mp-804) | <1 1 0> | <1 0 1> | 114.5 |
| GaN (mp-804) | <0 0 1> | <0 0 1> | 61.0 |
| GaN (mp-804) | <1 0 1> | <1 0 0> | 153.6 |
| GaN (mp-804) | <1 1 1> | <1 0 0> | 256.1 |
| SiO2 (mp-6930) | <1 0 1> | <1 0 0> | 290.2 |
| SiO2 (mp-6930) | <1 1 1> | <0 0 1> | 152.6 |
| SiO2 (mp-6930) | <0 0 1> | <0 0 1> | 198.4 |
| SiO2 (mp-6930) | <1 0 0> | <1 0 1> | 160.3 |
| SiO2 (mp-6930) | <1 1 0> | <1 0 0> | 290.2 |
| KCl (mp-23193) | <1 0 0> | <0 0 1> | 320.5 |
| KCl (mp-23193) | <1 1 0> | <0 0 1> | 228.9 |
| KCl (mp-23193) | <1 1 1> | <0 0 1> | 290.0 |
| DyScO3 (mp-31120) | <1 0 0> | <1 0 0> | 136.6 |
| DyScO3 (mp-31120) | <1 1 0> | <0 0 1> | 320.5 |
| InAs (mp-20305) | <1 0 0> | <1 0 0> | 153.6 |
| InAs (mp-20305) | <1 1 1> | <0 0 1> | 198.4 |
| DyScO3 (mp-31120) | <0 0 1> | <1 0 0> | 221.9 |
| DyScO3 (mp-31120) | <0 1 0> | <1 0 0> | 136.6 |
| DyScO3 (mp-31120) | <0 1 1> | <1 0 0> | 324.3 |
| DyScO3 (mp-31120) | <1 0 1> | <1 0 1> | 274.8 |
| KTaO3 (mp-3614) | <1 0 0> | <1 1 0> | 118.3 |
| KTaO3 (mp-3614) | <1 1 1> | <0 0 1> | 106.8 |
| CdS (mp-672) | <0 0 1> | <0 0 1> | 15.3 |
| CdS (mp-672) | <1 1 1> | <1 1 0> | 207.0 |
| ZnSe (mp-1190) | <1 0 0> | <1 1 0> | 236.5 |
| ZnSe (mp-1190) | <1 1 0> | <1 0 0> | 136.6 |
| ZnSe (mp-1190) | <1 1 1> | <1 0 0> | 170.7 |
| LiF (mp-1138) | <1 0 0> | <1 0 0> | 17.1 |
| LiF (mp-1138) | <1 1 0> | <1 1 0> | 118.3 |
| LiF (mp-1138) | <1 1 1> | <0 0 1> | 198.4 |
| KTaO3 (mp-3614) | <1 1 0> | <1 0 0> | 68.3 |
| Te2W (mp-22693) | <1 1 1> | <0 0 1> | 228.9 |
| CdS (mp-672) | <1 0 0> | <1 0 0> | 85.4 |
Elasticity
A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.
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Similar Structures
Explanation of dissimilarity measure: Documentation.| material | dissimilarity | Ehull | # of elements |
|---|---|---|---|
| DyGa2 (mp-20064) | 0.0077 | 0.000 | 2 |
| YSi2 (mp-2568) | 0.0071 | 0.037 | 2 |
| CeGa2 (mp-2209) | 0.0173 | 0.000 | 2 |
| HoGa2 (mp-1256) | 0.0068 | 0.000 | 2 |
| TbSi2 (mp-1535) | 0.0032 | 0.009 | 2 |
| CaZnSi (mp-16266) | 0.0044 | 0.000 | 3 |
| SmNiAs (mp-16734) | 0.0100 | 0.000 | 3 |
| ZrBeSi (mp-10200) | 0.0002 | 0.000 | 3 |
| BaSnHg (mp-11819) | 0.0007 | 0.000 | 3 |
| BaLiP (mp-13277) | 0.0055 | 0.000 | 3 |
Calculation Summary
Structure Optimization
Run TypeGGA |
Energy Cutoff520 eV |
# of K-points50 |
U Values-- |
PseudopotentialsVASP PAW: Ga_d Er_3 |
Final Energy/Atom-4.1527 eV |
Corrected Energy-12.4580 eV
-12.4580 eV = -12.4580 eV (uncorrected energy)
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Detailed input parameters and outputs for all calculations
ICSD IDs
- 630545
- 602414
- 630548
- 103229
- 103230
Submitted by
Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)