material

TaN
ID:

mp-251
DOI:

10.17188/1200491

Tags: Tantalum nitride - B1, NP Tantalum nitride (1/1) Tantalum nitride - delta Tantalum nitride - thin film Tantalum nitride - HT, delta Tantalum nitride Tantalum nitride (1/1) - rocksalt type

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-1.032 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.332 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
14.97 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
TaN
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Fm3m [225]
Hall
-F 4 2 3
Point Group
m3m
Crystal System
cubic

Electronic Structure

Topological data for ICSD ID 76456 from Topological Materials Database
Topological Classification
SM*
Subclassification
ESFD†
Crossing Type
Point
* Semimetal
† Enforced Semimetal with Fermi point Degeneracy

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
KP(HO2)2 (mp-23959) <0 0 1> <1 0 0> 293.4
KP(HO2)2 (mp-23959) <1 0 1> <1 1 1> 135.5
InSb (mp-20012) <1 1 0> <1 1 0> 249.0
InSb (mp-20012) <1 0 0> <1 0 0> 176.0
Au (mp-81) <1 1 0> <1 1 0> 221.3
AlN (mp-661) <0 0 1> <1 1 1> 33.9
Au (mp-81) <1 0 0> <1 0 0> 156.5
MgF2 (mp-1249) <0 0 1> <1 0 0> 176.0
CdTe (mp-406) <1 1 0> <1 1 0> 249.0
CdTe (mp-406) <1 0 0> <1 0 0> 176.0
LaAlO3 (mp-2920) <0 0 1> <1 1 1> 101.6
Cu (mp-30) <1 1 0> <1 1 0> 55.3
WS2 (mp-224) <1 1 1> <1 1 1> 237.1
TbScO3 (mp-31119) <1 1 0> <1 0 0> 254.3
CdWO4 (mp-19387) <0 0 1> <1 1 0> 276.6
Ag (mp-124) <1 1 0> <1 1 0> 221.3
BaTiO3 (mp-5986) <1 0 0> <1 1 0> 304.3
Ag (mp-124) <1 0 0> <1 0 0> 156.5
PbS (mp-21276) <1 1 0> <1 1 0> 304.3
YAlO3 (mp-3792) <0 0 1> <1 1 1> 169.4
Ga2O3 (mp-886) <1 1 0> <1 1 0> 221.3
GaTe (mp-542812) <1 0 0> <1 1 1> 135.5
AlN (mp-661) <1 0 1> <1 0 0> 215.2
DyScO3 (mp-31120) <1 1 0> <1 0 0> 254.3
LaF3 (mp-905) <0 0 1> <1 1 1> 135.5
LaAlO3 (mp-2920) <1 1 0> <1 1 0> 249.0
Ni (mp-23) <1 0 0> <1 0 0> 97.8
ZnO (mp-2133) <1 1 1> <1 1 0> 221.3
DyScO3 (mp-31120) <0 0 1> <1 1 0> 249.0
InP (mp-20351) <1 0 0> <1 0 0> 176.0
Y3Fe5O12 (mp-19648) <1 0 0> <1 0 0> 156.5
PbSe (mp-2201) <1 1 0> <1 1 0> 55.3
BaF2 (mp-1029) <1 1 0> <1 1 0> 55.3
PbSe (mp-2201) <1 0 0> <1 0 0> 39.1
Bi2Te3 (mp-34202) <0 0 1> <1 0 0> 136.9
BaF2 (mp-1029) <1 0 0> <1 0 0> 39.1
Bi2Se3 (mp-541837) <0 0 1> <1 1 1> 135.5
SrTiO3 (mp-4651) <0 0 1> <1 0 0> 156.5
GdScO3 (mp-5690) <1 1 0> <1 0 0> 254.3
InP (mp-20351) <1 1 0> <1 1 0> 304.3
ZnO (mp-2133) <1 0 0> <1 1 0> 193.6
BN (mp-984) <1 0 0> <1 1 0> 249.0
GaSb (mp-1156) <1 1 0> <1 1 0> 55.3
MgF2 (mp-1249) <1 0 0> <1 0 0> 58.7
MgF2 (mp-1249) <1 1 0> <1 1 0> 83.0
GaSb (mp-1156) <1 0 0> <1 0 0> 39.1
Fe2O3 (mp-24972) <1 0 1> <1 1 0> 221.3
SiO2 (mp-6930) <1 0 0> <1 0 0> 332.5
BaTiO3 (mp-5986) <1 1 1> <1 0 0> 313.0
ZrO2 (mp-2858) <1 0 0> <1 1 1> 169.4
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
747 117 117 0 0 0
117 747 117 0 0 0
117 117 747 0 0 0
0 0 0 62 0 0
0 0 0 0 62 0
0 0 0 0 0 62
Compliance Tensor Sij (10-12Pa-1)
1.4 -0.2 -0.2 0 0 0
-0.2 1.4 -0.2 0 0 0
-0.2 -0.2 1.4 0 0 0
0 0 0 16.2 0 0
0 0 0 0 16.2 0
0 0 0 0 0 16.2
Shear Modulus GV
163 GPa
Bulk Modulus KV
327 GPa
Shear Modulus GR
91 GPa
Bulk Modulus KR
327 GPa
Shear Modulus GVRH
127 GPa
Bulk Modulus KVRH
327 GPa
Elastic Anisotropy
3.96
Poisson's Ratio
0.33

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
Sr4SO3 (mp-1079788) 0.0000 0.200 3
BaSr3O4 (mp-984729) 0.0000 0.044 3
ScH4Pd3 (mp-981386) 0.0000 0.039 3
Sr3CdO4 (mp-981103) 0.0000 0.019 3
SrCa3O4 (mp-978844) 0.0000 0.040 3
PuB (mp-2765) 0.0000 0.818 2
HgS (mp-10764) 0.0000 0.176 2
LaP (mp-2384) 0.0000 0.000 2
PuSe (mp-2288) 0.0000 0.000 2
SnP (mp-475) 0.0000 0.043 2
As (mp-10) 0.0000 0.126 1
Sc (mp-1008681) 0.0000 0.719 1
Ca (mp-10683) 0.0000 0.393 1
C (mp-998866) 0.0000 2.763 1
Sb (mp-133) 0.0000 0.051 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1016/j.actamat.2014.03.015
Three model alloys, referred to as TaC, TaN and VN, were cast using vacuum induction melting (VIM) by Sophisticated Alloys, Inc. The ingots (4.5kg each) were hot forged and rolled to 20mm slabs fol [...]
10.1016/j.mee.2011.03.022
TaN and TiN have been deposited on 8in. silicon wafers by physical vapor deposition (PVD) and chemical vapor deposition (CVD) technique, respectively. SrTiO3 and Al2O3 layers were deposited by atomic [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition TaN.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Ta_pv N
Final Energy/Atom
-10.9373 eV
Corrected Energy
-21.8745 eV
-21.8745 eV = -21.8745 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

Show JSON History Show BibTex Citation Download BibTex Citation
ICSD IDs
  • 180958
  • 180959
  • 187023
  • 180957
  • 180960
  • 644704
  • 183425
  • 167860
  • 644727
  • 76456
  • 185287
  • 167902
  • 167806
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User remarks:
  • Tantalum nitride - thin film

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)