material
ErSeF
ID:
mp-27123
DOI:
10.17188/1201311
Final Magnetic Moment0.000 μBCalculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit. |
Magnetic OrderingNM |
Formation Energy / Atom-3.015 eVCalculated formation energy from the elements normalized to per atom in the unit cell. |
Energy Above Hull / Atom0.024 eVThe energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures. |
Density6.89 g/cm3The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%) |
Decomposes ToErF3 + Er2Se3 |
Band Gap2.112 eVIn general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic. |
Hermann MauguinPnma [62] |
Hall-P 2ac 2n |
Point Groupmmm |
Crystal Systemorthorhombic |
Electronic Structure
Band Structure and Density of States
X-Ray Diffraction
-
Select radiation source:
- Cu
- Ag
- Mo
- Fe
Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)
X-Ray Absorption Spectra
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Download spectra for every symmetrically equivalent absorption site in the structure.
Download FEFF Input parameters.
Substrates
Reference for minimal coincident interface area (MCIA) and elastic energy:substrate orientation:
| substrate material | substrate orientation | film orientation | MCIA† [Å2] |
|---|---|---|---|
| LaAlO3 (mp-2920) | <1 0 0> | <0 0 1> | 203.1 |
| AlN (mp-661) | <0 0 1> | <0 0 1> | 324.9 |
| AlN (mp-661) | <1 0 0> | <0 0 1> | 121.8 |
| AlN (mp-661) | <1 1 0> | <0 1 0> | 308.0 |
| AlN (mp-661) | <1 1 1> | <0 0 1> | 284.3 |
| GaAs (mp-2534) | <1 0 0> | <0 0 1> | 162.4 |
| GaAs (mp-2534) | <1 1 0> | <0 0 1> | 284.3 |
| GaAs (mp-2534) | <1 1 1> | <0 1 1> | 174.1 |
| GaN (mp-804) | <1 0 0> | <0 0 1> | 203.1 |
| SiO2 (mp-6930) | <1 0 1> | <0 0 1> | 284.3 |
| SiO2 (mp-6930) | <1 1 0> | <0 0 1> | 284.3 |
| DyScO3 (mp-31120) | <1 0 1> | <0 0 1> | 284.3 |
| DyScO3 (mp-31120) | <1 1 0> | <0 0 1> | 324.9 |
| DyScO3 (mp-31120) | <0 1 0> | <0 1 0> | 308.0 |
| DyScO3 (mp-31120) | <0 1 1> | <0 0 1> | 162.4 |
| DyScO3 (mp-31120) | <1 0 0> | <0 0 1> | 324.9 |
| ZnSe (mp-1190) | <1 1 0> | <0 0 1> | 284.3 |
| KTaO3 (mp-3614) | <1 0 0> | <0 0 1> | 81.2 |
| CdS (mp-672) | <1 0 1> | <0 0 1> | 203.1 |
| LiF (mp-1138) | <1 1 0> | <0 0 1> | 162.4 |
| ZnSe (mp-1190) | <1 0 0> | <0 0 1> | 162.4 |
| ZnSe (mp-1190) | <1 1 1> | <0 1 1> | 174.1 |
| KTaO3 (mp-3614) | <1 1 0> | <0 0 1> | 162.4 |
| KTaO3 (mp-3614) | <1 1 1> | <0 0 1> | 284.3 |
| CdS (mp-672) | <1 0 0> | <0 0 1> | 284.3 |
| LiF (mp-1138) | <1 0 0> | <0 0 1> | 81.2 |
| LiF (mp-1138) | <1 1 1> | <0 0 1> | 284.3 |
| Te2W (mp-22693) | <0 0 1> | <0 0 1> | 243.7 |
| Te2W (mp-22693) | <1 0 0> | <0 0 1> | 203.1 |
| Te2W (mp-22693) | <1 0 1> | <0 0 1> | 203.1 |
| YVO4 (mp-19133) | <1 1 0> | <1 0 1> | 192.3 |
| YVO4 (mp-19133) | <0 0 1> | <0 0 1> | 203.1 |
| Ag (mp-124) | <1 0 0> | <0 1 1> | 87.1 |
| BN (mp-984) | <1 0 1> | <0 1 0> | 308.0 |
| BN (mp-984) | <1 1 1> | <0 0 1> | 203.1 |
| Ag (mp-124) | <1 1 0> | <0 0 1> | 121.8 |
| Bi2Se3 (mp-541837) | <1 0 0> | <0 0 1> | 121.8 |
| MoS2 (mp-1434) | <1 0 1> | <0 0 1> | 284.3 |
| BN (mp-984) | <1 1 0> | <0 0 1> | 203.1 |
| LiNbO3 (mp-3731) | <0 0 1> | <0 0 1> | 284.3 |
| Bi2Se3 (mp-541837) | <0 0 1> | <0 0 1> | 121.8 |
| LiGaO2 (mp-5854) | <1 0 0> | <0 0 1> | 284.3 |
| Al (mp-134) | <1 0 0> | <0 0 1> | 81.2 |
| Al (mp-134) | <1 1 0> | <0 0 1> | 162.4 |
| Al (mp-134) | <1 1 1> | <0 0 1> | 284.3 |
| LiGaO2 (mp-5854) | <0 0 1> | <0 1 0> | 308.0 |
| LiGaO2 (mp-5854) | <1 0 1> | <0 1 0> | 308.0 |
| SiC (mp-7631) | <1 0 1> | <0 0 1> | 324.9 |
| TeO2 (mp-2125) | <1 1 0> | <0 1 0> | 308.0 |
| SiC (mp-7631) | <0 0 1> | <0 1 1> | 174.1 |
Elasticity
A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.
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Similar Structures
Explanation of dissimilarity measure:
Documentation.
| material | dissimilarity | Ehull | # of elements |
|---|---|---|---|
| YSeF (mp-696195) | 0.1999 | 0.017 | 3 |
Calculation Summary
Structure Optimization
Run TypeGGA |
Energy Cutoff520 eV |
# of K-pointsNone |
U Values-- |
PseudopotentialsVASP PAW: Er_3 Se F |
Final Energy/Atom-6.1761 eV |
Corrected Energy-233.5478 eV
Uncorrected energy = -222.3398 eV
Composition-based energy adjustment (-0.472 eV/atom x 12.0 atoms) = -5.6640 eV
Composition-based energy adjustment (-0.462 eV/atom x 12.0 atoms) = -5.5440 eV
Corrected energy = -233.5478 eV
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Detailed input parameters and outputs for all calculations
ICSD IDs
- 1826
Submitted by
User remarks:
- Erbium selenide fluoride
Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)