material
PrAu2
ID:
mp-30415
DOI:
10.17188/1204823
Final Magnetic Moment-0.000 μBCalculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit. |
Magnetic OrderingUnknown |
Formation Energy / Atom-0.760 eVCalculated formation energy from the elements normalized to per atom in the unit cell. |
Energy Above Hull / Atom0.000 eVThe energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures. |
Density12.42 g/cm3The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%) |
Decomposes ToStable |
Band Gap0.000 eVIn general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic. |
Hermann MauguinImma [74] |
Hall-I 2b 2 |
Point Groupmmm |
Crystal Systemorthorhombic |
Band Structure
Density of States
sign indicates spin ↑ ↓
X-Ray Diffraction
-
Select radiation source:
- Cu
- Ag
- Mo
- Fe
Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)
X-Ray Absorption Spectra
Select an element to display a spectrum averaged over all sites of that element in the structure.
Apply Gaussian smoothing:
Download spectra for every symmetrically equivalent absorption site in the structure.
Download FEFF Input parameters.
Substrates
Reference for minimal coincident interface area (MCIA) and elastic energy:substrate orientation:
| substrate material | substrate orientation | film orientation | MCIA† [Å2] |
|---|---|---|---|
| LaAlO3 (mp-2920) | <0 0 1> | <0 1 0> | 79.1 |
| AlN (mp-661) | <1 0 1> | <0 1 0> | 158.3 |
| AlN (mp-661) | <1 1 0> | <0 0 1> | 341.7 |
| AlN (mp-661) | <1 1 1> | <0 1 0> | 277.0 |
| GaAs (mp-2534) | <1 1 0> | <1 1 0> | 144.6 |
| BaF2 (mp-1029) | <1 0 0> | <0 0 1> | 205.0 |
| BaF2 (mp-1029) | <1 1 0> | <1 1 0> | 217.0 |
| GaN (mp-804) | <1 0 0> | <1 1 1> | 320.0 |
| SiO2 (mp-6930) | <0 0 1> | <1 1 0> | 217.0 |
| SiO2 (mp-6930) | <1 0 1> | <0 1 0> | 356.1 |
| AlN (mp-661) | <0 0 1> | <0 1 0> | 118.7 |
| AlN (mp-661) | <1 0 0> | <0 1 0> | 277.0 |
| CeO2 (mp-20194) | <1 0 0> | <0 0 1> | 239.2 |
| CeO2 (mp-20194) | <1 1 0> | <0 1 1> | 261.4 |
| GaAs (mp-2534) | <1 0 0> | <0 1 0> | 197.8 |
| GaAs (mp-2534) | <1 1 1> | <0 1 0> | 118.7 |
| GaN (mp-804) | <0 0 1> | <0 1 0> | 79.1 |
| GaN (mp-804) | <1 0 1> | <0 0 1> | 273.4 |
| GaN (mp-804) | <1 1 1> | <0 0 1> | 273.4 |
| SiO2 (mp-6930) | <1 1 0> | <1 1 0> | 144.6 |
| KCl (mp-23193) | <1 0 0> | <0 0 1> | 205.0 |
| DyScO3 (mp-31120) | <0 0 1> | <0 1 1> | 261.4 |
| DyScO3 (mp-31120) | <0 1 0> | <0 1 1> | 261.4 |
| DyScO3 (mp-31120) | <0 1 1> | <1 0 1> | 208.6 |
| DyScO3 (mp-31120) | <1 0 1> | <0 1 0> | 158.3 |
| DyScO3 (mp-31120) | <1 1 1> | <0 1 0> | 277.0 |
| Te2W (mp-22693) | <0 0 1> | <1 1 0> | 217.0 |
| Te2W (mp-22693) | <0 1 1> | <1 1 0> | 289.3 |
| YVO4 (mp-19133) | <0 0 1> | <0 0 1> | 102.5 |
| YVO4 (mp-19133) | <1 0 0> | <0 0 1> | 136.7 |
| YVO4 (mp-19133) | <1 0 1> | <0 0 1> | 68.3 |
| InAs (mp-20305) | <1 1 0> | <1 1 0> | 217.0 |
| ZnSe (mp-1190) | <1 0 0> | <0 1 0> | 197.8 |
| ZnSe (mp-1190) | <1 1 0> | <0 1 0> | 237.4 |
| TePb (mp-19717) | <1 0 0> | <0 1 1> | 313.7 |
| TePb (mp-19717) | <1 1 0> | <0 1 1> | 313.7 |
| Te2Mo (mp-602) | <0 0 1> | <0 0 1> | 273.4 |
| Te2Mo (mp-602) | <1 0 1> | <0 0 1> | 273.4 |
| KTaO3 (mp-3614) | <1 0 0> | <0 1 0> | 197.8 |
| KTaO3 (mp-3614) | <1 1 1> | <0 0 1> | 307.6 |
| Bi2Te3 (mp-34202) | <0 0 1> | <1 1 0> | 289.3 |
| GaSe (mp-1943) | <0 0 1> | <1 0 0> | 242.2 |
| BN (mp-984) | <0 0 1> | <1 1 0> | 289.3 |
| CdS (mp-672) | <0 0 1> | <1 0 0> | 60.5 |
| CdS (mp-672) | <1 0 0> | <1 1 1> | 320.0 |
| CdS (mp-672) | <1 0 1> | <1 1 0> | 289.3 |
| CdS (mp-672) | <1 1 0> | <1 0 0> | 242.2 |
| CdS (mp-672) | <1 1 1> | <0 0 1> | 102.5 |
| BN (mp-984) | <1 0 1> | <0 0 1> | 239.2 |
| LiNbO3 (mp-3731) | <0 0 1> | <0 0 1> | 307.6 |
Elasticity
A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.
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Similar Structures
Explanation of dissimilarity measure: Documentation.| material | dissimilarity | Ehull | # of elements |
|---|---|---|---|
| RbSbBrF3 (mp-555234) | 0.7331 | 0.000 | 4 |
| SrAu2 (mp-434) | 0.3373 | 0.000 | 2 |
| CaAu2 (mp-443) | 0.2441 | 0.000 | 2 |
| CaCd2 (mp-1444) | 0.2384 | 0.000 | 2 |
| CeCu2 (mp-2801) | 0.2964 | 0.000 | 2 |
| TbCu2 (mp-1527) | 0.3469 | 0.000 | 2 |
| LuNiGe (mp-19922) | 0.4196 | 0.000 | 3 |
| ErNiSn (mp-622620) | 0.4085 | 0.000 | 3 |
| TmNiGe (mp-21157) | 0.4215 | 0.000 | 3 |
| SmGePt (mp-20293) | 0.4089 | 0.015 | 3 |
| HoNiGe (mp-542171) | 0.4155 | 0.000 | 3 |
Calculation Summary
Structure Optimization
Run TypeGGA |
Energy Cutoff520 eV |
# of K-points84 |
U Values-- |
PseudopotentialsVASP PAW: Pr_3 Au |
Final Energy/Atom-4.5359 eV |
Corrected Energy-27.2152 eV
-27.2152 eV = -27.2152 eV (uncorrected energy)
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Detailed input parameters and outputs for all calculations
ICSD IDs
- 58577
Submitted by
Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)