Final Magnetic Moment1.047 μBCalculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit. |
Magnetic OrderingFM |
Formation Energy / Atom-0.429 eVCalculated formation energy from the elements normalized to per atom in the unit cell. |
Energy Above Hull / Atom0.121 eVThe energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures. |
Density5.20 g/cm3The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%) |
Decomposes ToCr3Si + CrSi2 + YSi |
Band Gap0.000 eVIn general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic. |
Hermann MauguinI4/mmm [139] |
Hall-I 4 2 |
Point Group4/mmm |
Crystal Systemtetragonal |
Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)
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substrate material | substrate orientation | film orientation | MCIA† [Å2] |
---|---|---|---|
LaAlO3 (mp-2920) | <0 0 1> | <1 1 1> | 180.5 |
LaAlO3 (mp-2920) | <1 0 0> | <1 0 0> | 288.6 |
LaAlO3 (mp-2920) | <1 1 1> | <0 0 1> | 252.3 |
AlN (mp-661) | <0 0 1> | <0 0 1> | 163.3 |
AlN (mp-661) | <1 0 1> | <1 0 1> | 219.1 |
AlN (mp-661) | <1 1 0> | <0 0 1> | 193.0 |
AlN (mp-661) | <1 1 1> | <1 1 0> | 58.3 |
CeO2 (mp-20194) | <1 1 0> | <0 0 1> | 207.8 |
CeO2 (mp-20194) | <1 1 1> | <1 0 1> | 262.9 |
LaAlO3 (mp-2920) | <1 0 1> | <0 0 1> | 74.2 |
GaAs (mp-2534) | <1 0 0> | <1 0 1> | 131.4 |
BaF2 (mp-1029) | <1 1 0> | <1 0 0> | 164.9 |
AlN (mp-661) | <1 0 0> | <0 0 1> | 163.3 |
CeO2 (mp-20194) | <1 0 0> | <0 0 1> | 29.7 |
GaN (mp-804) | <0 0 1> | <0 0 1> | 44.5 |
BaF2 (mp-1029) | <1 0 0> | <0 0 1> | 193.0 |
GaN (mp-804) | <1 0 0> | <0 0 1> | 163.3 |
GaN (mp-804) | <1 0 1> | <1 0 0> | 247.3 |
GaN (mp-804) | <1 1 0> | <1 1 0> | 58.3 |
SiO2 (mp-6930) | <1 0 1> | <1 0 0> | 329.8 |
SiO2 (mp-6930) | <1 1 0> | <1 1 0> | 233.2 |
KCl (mp-23193) | <1 0 0> | <0 0 1> | 193.0 |
KCl (mp-23193) | <1 1 0> | <1 0 1> | 175.3 |
SiO2 (mp-6930) | <0 0 1> | <1 0 0> | 329.8 |
SiO2 (mp-6930) | <1 0 0> | <0 0 1> | 193.0 |
DyScO3 (mp-31120) | <0 1 1> | <1 0 0> | 206.1 |
DyScO3 (mp-31120) | <1 0 1> | <1 0 1> | 219.1 |
DyScO3 (mp-31120) | <1 1 0> | <1 0 1> | 131.4 |
DyScO3 (mp-31120) | <1 1 1> | <0 0 1> | 282.0 |
InAs (mp-20305) | <1 1 0> | <1 0 0> | 164.9 |
ZnSe (mp-1190) | <1 0 0> | <1 0 1> | 131.4 |
DyScO3 (mp-31120) | <0 0 1> | <1 0 0> | 123.7 |
DyScO3 (mp-31120) | <0 1 0> | <1 1 0> | 174.9 |
InAs (mp-20305) | <1 0 0> | <0 0 1> | 74.2 |
InAs (mp-20305) | <1 1 1> | <1 0 0> | 329.8 |
KTaO3 (mp-3614) | <1 0 0> | <1 0 1> | 131.4 |
KTaO3 (mp-3614) | <1 1 1> | <1 0 1> | 219.1 |
KTaO3 (mp-3614) | <1 1 0> | <0 0 1> | 252.3 |
CdS (mp-672) | <1 0 0> | <1 0 0> | 288.6 |
CdS (mp-672) | <1 0 1> | <0 0 1> | 296.9 |
CdS (mp-672) | <0 0 1> | <1 0 1> | 219.1 |
CdS (mp-672) | <1 1 1> | <1 0 0> | 206.1 |
LiF (mp-1138) | <1 0 0> | <1 0 1> | 131.4 |
LiF (mp-1138) | <1 1 0> | <0 0 1> | 252.3 |
Te2W (mp-22693) | <0 0 1> | <1 0 0> | 206.1 |
Te2W (mp-22693) | <1 0 0> | <0 0 1> | 296.9 |
Te2W (mp-22693) | <0 1 0> | <1 0 0> | 164.9 |
YVO4 (mp-19133) | <0 0 1> | <0 0 1> | 252.3 |
YVO4 (mp-19133) | <1 1 0> | <0 0 1> | 326.6 |
Te2Mo (mp-602) | <0 0 1> | <1 1 0> | 233.2 |
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material | dissimilarity | Ehull | # of elements |
---|---|---|---|
Tb(CrSi)2 (mp-8832) | 0.0079 | 0.115 | 3 |
Ho(CrSi)2 (mp-5561) | 0.0200 | 0.110 | 3 |
Dy(CrSi)2 (mp-19909) | 0.0081 | 0.113 | 3 |
Er(CrSi)2 (mp-12082) | 0.0340 | 0.108 | 3 |
Dy(CrSi)2 (mp-1001906) | 0.0079 | 0.113 | 3 |
NdAl4 (mp-1834) | 0.3035 | 0.058 | 2 |
NaGa4 (mp-454) | 0.3557 | 0.000 | 2 |
PrAl4 (mp-2336) | 0.3357 | 0.037 | 2 |
CeAl4 (mp-2289) | 0.2789 | 0.040 | 2 |
SmAl4 (mp-1891) | 0.2573 | 0.078 | 2 |
Run TypeGGA |
Energy Cutoff520 eV |
# of K-pointsNone |
U Values-- |
PseudopotentialsVASP PAW: Y_sv Cr_pv Si |
Final Energy/Atom-7.7524 eV |
Corrected Energy-38.6200 eV
Uncorrected energy = -38.7620 eV
Composition-based energy adjustment (0.071 eV/atom x 2.0 atoms) = 0.1420 eV
Corrected energy = -38.6200 eV
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Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)