material

SnO2
ID:

mp-550172
DOI:

10.17188/1267408

Tags: High pressure experimental phase Tin dioxide

Material Details

Final Magnetic Moment
0.001 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-2.121 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.002 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
6.63 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
SnO2
Band Gap
0.823 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Pnnm [58]
Hall
-P 2 2n
Point Group
mmm
Crystal System
orthorhombic

Electronic Structure

Topological data for ICSD ID 56675 from Topological Materials Database
Topological Classification
trivial*
Subclassification
LCEBR†
* trivial insulator or metal
† Linear Combination of Elementary Band Representations

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
AlN (mp-661) <0 0 1> <0 0 1> 93.1
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 186.2
LaAlO3 (mp-2920) <1 1 0> <0 0 1> 124.1
AlN (mp-661) <1 0 0> <1 0 1> 112.0
AlN (mp-661) <1 0 1> <1 0 1> 56.0
AlN (mp-661) <1 1 0> <1 1 1> 192.8
AlN (mp-661) <1 1 1> <1 0 0> 116.5
CeO2 (mp-20194) <1 0 0> <1 0 0> 116.5
CeO2 (mp-20194) <1 1 0> <1 1 1> 128.5
CeO2 (mp-20194) <1 1 1> <1 1 1> 257.1
GaAs (mp-2534) <1 0 0> <1 0 1> 168.0
GaAs (mp-2534) <1 1 0> <1 0 1> 140.0
GaAs (mp-2534) <1 1 1> <0 1 0> 173.5
GaN (mp-804) <0 0 1> <0 0 1> 108.6
GaN (mp-804) <1 0 0> <0 1 1> 66.4
GaN (mp-804) <1 1 0> <1 0 0> 116.5
GaN (mp-804) <1 1 1> <1 0 0> 116.5
BaF2 (mp-1029) <1 0 0> <0 0 1> 186.2
GaN (mp-804) <1 0 1> <1 0 1> 56.0
SiO2 (mp-6930) <1 0 0> <1 1 1> 192.8
SiO2 (mp-6930) <1 0 1> <1 1 0> 140.7
SiO2 (mp-6930) <1 1 1> <1 0 0> 209.7
KCl (mp-23193) <1 0 0> <0 0 1> 124.1
SiO2 (mp-6930) <1 1 0> <0 1 1> 287.6
KCl (mp-23193) <1 1 0> <0 1 1> 177.0
DyScO3 (mp-31120) <1 0 0> <1 0 1> 140.0
DyScO3 (mp-31120) <1 0 1> <1 0 1> 56.0
DyScO3 (mp-31120) <1 1 0> <1 0 0> 302.9
DyScO3 (mp-31120) <1 1 1> <0 0 1> 139.7
InAs (mp-20305) <1 0 0> <0 0 1> 186.2
ZnSe (mp-1190) <1 0 0> <1 0 1> 168.0
DyScO3 (mp-31120) <0 0 1> <1 0 1> 196.0
DyScO3 (mp-31120) <0 1 0> <0 0 1> 263.8
DyScO3 (mp-31120) <0 1 1> <0 0 1> 155.2
KTaO3 (mp-3614) <1 0 0> <1 0 1> 196.0
KTaO3 (mp-3614) <1 1 0> <1 0 1> 140.0
KTaO3 (mp-3614) <1 1 1> <1 0 0> 139.8
ZnSe (mp-1190) <1 1 0> <1 0 1> 140.0
ZnSe (mp-1190) <1 1 1> <0 1 0> 173.5
CdS (mp-672) <0 0 1> <1 0 1> 252.0
CdS (mp-672) <1 0 0> <0 1 1> 88.5
CdS (mp-672) <1 1 1> <0 0 1> 155.2
LiF (mp-1138) <1 1 1> <1 0 0> 139.8
Te2W (mp-22693) <0 0 1> <0 0 1> 155.2
Te2W (mp-22693) <1 0 0> <1 0 1> 196.0
Te2W (mp-22693) <1 0 1> <1 0 1> 196.0
CdS (mp-672) <1 0 1> <1 0 1> 196.0
CdS (mp-672) <1 1 0> <0 1 1> 199.1
YVO4 (mp-19133) <1 0 0> <1 1 1> 321.3
YVO4 (mp-19133) <1 1 0> <0 0 1> 341.4
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
376 127 127 0 0 0
127 213 138 0 0 0
127 138 214 0 0 0
0 0 0 178 0 0
0 0 0 0 84 0
0 0 0 0 0 84
Compliance Tensor Sij (10-12Pa-1)
3.5 -1.3 -1.3 0.0 -0.0 0
-1.3 8.5 -4.7 -0.0 0.0 0
-1.3 -4.7 8.5 0.0 -0.0 0
0.0 -0.0 0.0 5.6 -0.0 0
-0.0 0.0 -0.0 -0.0 11.9 0
0 0 0 0 0 11.9
Shear Modulus GV
96 GPa
Bulk Modulus KV
176 GPa
Shear Modulus GR
75 GPa
Bulk Modulus KR
168 GPa
Shear Modulus GVRH
86 GPa
Bulk Modulus KVRH
172 GPa
Elastic Anisotropy
1.47
Poisson's Ratio
0.29

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
BaCaI4 (mp-753486) 0.2936 0.051 3
HfZrO4 (mp-754134) 0.2276 0.039 3
Cr(SbO3)2 (mp-769853) 0.2029 0.063 3
Ni6OF11 (mp-776653) 0.2030 0.038 3
Cu(SbO3)2 (mp-554658) 0.1882 0.004 3
LiFe3(OF3)2 (mp-779990) 0.2808 0.005 4
LiV3(OF3)2 (mp-868491) 0.2993 0.000 4
LiCo3(OF3)2 (mp-850982) 0.2859 0.022 4
Ta2CrNO5 (mp-849504) 0.3539 0.065 4
AlSb(WO4)2 (mvc-665) 0.3499 0.181 4
CaCl2 (mp-23214) 0.1312 0.000 2
GeO2 (mp-1072104) 0.1270 0.006 2
MnO2 (mp-715432) 0.1050 0.030 2
NiF2 (mp-566755) 0.0880 0.238 2
MgF2 (mp-1072956) 0.1134 0.002 2
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1016/j.electacta.2011.10.044
The support (SnO2) was synthesized by the SolGel method. SnCl4 (Analytically Pure, Beijing Chemical Factory) and citric acid (Analytically Pure, Beijing Chemical Factory) were dissolved in distilled [...]
10.1016/j.matchemphys.2009.01.032
Tin dioxide (SnO2) nanowires were prepared direct by pulsed laser deposition (PLD) method [26]. The fabrication can be described in detail as follows: the sintered cassiterite SnO2 bulk was used as th [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition SnO2.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Sn_d O
Final Energy/Atom
-6.2824 eV
Corrected Energy
-40.4423 eV
Uncorrected energy = -37.6943 eV Composition-based energy adjustment (-0.687 eV/atom x 4.0 atoms) = -2.7480 eV Corrected energy = -40.4423 eV

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 56675
  • 56676
  • 189464
Submitted by
User remarks:
  • High pressure experimental phase
  • Tin(IV) oxide - HP

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)