material

SnO2
ID:

mp-550172
DOI:

10.17188/1267408

Tags: High pressure experimental phase Tin dioxide

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
Non-magnetic
Formation Energy / Atom
-2.123 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.002 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
6.63 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
SnO2
Band Gap
0.806 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Pnnm [58]
Hall
-P 2 2n
Point Group
mmm
Crystal System
orthorhombic

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
AlN (mp-661) <0 0 1> <0 0 1> 93.1
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 186.2
LaAlO3 (mp-2920) <1 1 0> <0 0 1> 124.1
AlN (mp-661) <1 0 0> <1 0 1> 112.0
AlN (mp-661) <1 0 1> <1 0 1> 56.0
AlN (mp-661) <1 1 0> <1 1 1> 192.8
AlN (mp-661) <1 1 1> <1 0 0> 116.5
CeO2 (mp-20194) <1 0 0> <1 0 0> 116.5
CeO2 (mp-20194) <1 1 0> <1 1 1> 128.5
CeO2 (mp-20194) <1 1 1> <1 1 1> 257.1
GaAs (mp-2534) <1 0 0> <1 0 1> 168.0
GaAs (mp-2534) <1 1 0> <1 0 1> 140.0
GaAs (mp-2534) <1 1 1> <0 1 0> 173.5
GaN (mp-804) <0 0 1> <0 0 1> 108.6
GaN (mp-804) <1 0 0> <0 1 1> 66.4
GaN (mp-804) <1 1 0> <1 0 0> 116.5
GaN (mp-804) <1 1 1> <1 0 0> 116.5
BaF2 (mp-1029) <1 0 0> <0 0 1> 186.2
GaN (mp-804) <1 0 1> <1 0 1> 56.0
SiO2 (mp-6930) <1 0 0> <1 1 1> 192.8
SiO2 (mp-6930) <1 0 1> <1 1 0> 140.7
SiO2 (mp-6930) <1 1 1> <1 0 0> 209.7
KCl (mp-23193) <1 0 0> <0 0 1> 124.1
SiO2 (mp-6930) <1 1 0> <0 1 1> 287.6
KCl (mp-23193) <1 1 0> <0 1 1> 177.0
DyScO3 (mp-31120) <1 0 0> <1 0 1> 140.0
DyScO3 (mp-31120) <1 0 1> <1 0 1> 56.0
DyScO3 (mp-31120) <1 1 0> <1 0 0> 302.9
DyScO3 (mp-31120) <1 1 1> <0 0 1> 139.7
InAs (mp-20305) <1 0 0> <0 0 1> 186.2
ZnSe (mp-1190) <1 0 0> <1 0 1> 168.0
DyScO3 (mp-31120) <0 0 1> <1 0 1> 196.0
DyScO3 (mp-31120) <0 1 0> <0 0 1> 263.8
DyScO3 (mp-31120) <0 1 1> <0 0 1> 155.2
KTaO3 (mp-3614) <1 0 0> <1 0 1> 196.0
KTaO3 (mp-3614) <1 1 0> <1 0 1> 140.0
KTaO3 (mp-3614) <1 1 1> <1 0 0> 139.8
ZnSe (mp-1190) <1 1 0> <1 0 1> 140.0
ZnSe (mp-1190) <1 1 1> <0 1 0> 173.5
CdS (mp-672) <0 0 1> <1 0 1> 252.0
CdS (mp-672) <1 0 0> <0 1 1> 88.5
CdS (mp-672) <1 1 1> <0 0 1> 155.2
LiF (mp-1138) <1 1 1> <1 0 0> 139.8
Te2W (mp-22693) <0 0 1> <0 0 1> 155.2
Te2W (mp-22693) <1 0 0> <1 0 1> 196.0
Te2W (mp-22693) <1 0 1> <1 0 1> 196.0
CdS (mp-672) <1 0 1> <1 0 1> 196.0
CdS (mp-672) <1 1 0> <0 1 1> 199.1
YVO4 (mp-19133) <1 0 0> <1 1 1> 321.3
YVO4 (mp-19133) <1 1 0> <0 0 1> 341.4
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
376 127 127 0 0 0
127 213 138 0 0 0
127 138 214 0 0 0
0 0 0 178 0 0
0 0 0 0 84 0
0 0 0 0 0 84
Compliance Tensor Sij (10-12Pa-1)
3.5 -1.3 -1.3 0.0 -0.0 0
-1.3 8.5 -4.7 -0.0 0.0 0
-1.3 -4.7 8.5 0.0 -0.0 0
0.0 -0.0 0.0 5.6 -0.0 0
-0.0 0.0 -0.0 -0.0 11.9 0
0 0 0 0 0 11.9
Shear Modulus GV
96 GPa
Bulk Modulus KV
176 GPa
Shear Modulus GR
75 GPa
Bulk Modulus KR
168 GPa
Shear Modulus GVRH
86 GPa
Bulk Modulus KVRH
172 GPa
Elastic Anisotropy
1.47
Poisson's Ratio
0.29

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
BaCaI4 (mp-753486) 0.2936 0.051 3
HfZrO4 (mp-754134) 0.2276 0.039 3
Cr(SbO3)2 (mp-769853) 0.2029 0.062 3
Ni6OF11 (mp-776653) 0.2030 0.036 3
Cu(SbO3)2 (mp-554658) 0.1882 0.001 3
LiFe3(OF3)2 (mp-779990) 0.2808 0.016 4
LiV3(OF3)2 (mp-868491) 0.2993 0.046 4
LiCo3(OF3)2 (mp-850982) 0.2859 0.086 4
Ta2CrNO5 (mp-849504) 0.3539 0.062 4
AlSb(WO4)2 (mvc-665) 0.3499 0.068 4
CaCl2 (mp-23214) 0.1312 0.000 2
GeO2 (mp-1072104) 0.1270 0.006 2
MnO2 (mp-715432) 0.1050 0.037 2
NiF2 (mp-566755) 0.0880 0.001 2
MgF2 (mp-1072956) 0.1134 0.037 2
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1002/anie.200351338
Complex 1 was prepared by the treatment of tetrachlorocatechol with [Ru(dcbpy)2Cl2] (dcbpy=2,2-bipyridine-4,4-dicarboxylic acid) in aqueous methanol at reflux, and purified by chromatography on Seph [...]
10.1016/0376-4583(83)90063-8
An SnO2/Si electrode 6 mm in diameter was coated with 0.4 g of platinum by means of thermal decomposition and was used for the electrolytic reduction of oxygen. 50%MeOH-50%H2O and 90%MeOH-10%H2O solu [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition SnO2.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: O Sn_d
Final Energy/Atom
-6.2812 eV
Corrected Energy
-40.4962 eV
-40.4962 eV = -37.6871 eV (uncorrected energy) - 2.8092 eV (MP Anion Correction)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 56675
  • 56676
  • 189464
Submitted by
User remarks:
  • High pressure experimental phase
  • Tin(IV) oxide - HP

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)