material

SiO2
ID:

mp-558733
DOI:

10.17188/1270472

Tags: Silicon oxide - high pressure

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-3.019 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.258 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
4.08 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
SiO2
Band Gap
5.282 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
C2/c [15]
Hall
-C 2yc
Point Group
2/m
Crystal System
monoclinic

Electronic Structure

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
LaAlO3 (mp-2920) <0 0 1> <1 0 0> 281.9
AlN (mp-661) <1 0 0> <1 0 0> 47.0
AlN (mp-661) <1 0 1> <0 1 0> 232.2
AlN (mp-661) <1 1 0> <1 0 0> 140.9
GaAs (mp-2534) <1 0 0> <1 1 -1> 259.7
GaAs (mp-2534) <1 1 0> <1 0 1> 145.5
BaF2 (mp-1029) <1 0 0> <0 1 0> 290.3
BaF2 (mp-1029) <1 1 0> <1 0 1> 218.2
GaN (mp-804) <0 0 1> <1 0 0> 234.9
GaN (mp-804) <1 0 1> <1 1 0> 250.5
KCl (mp-23193) <1 0 0> <0 1 0> 290.3
DyScO3 (mp-31120) <0 1 0> <1 1 0> 313.1
AlN (mp-661) <0 0 1> <1 0 0> 211.4
AlN (mp-661) <1 1 1> <1 1 1> 279.2
GaN (mp-804) <1 0 0> <1 1 0> 250.5
SiO2 (mp-6930) <0 0 1> <1 0 1> 218.2
SiO2 (mp-6930) <1 0 0> <1 0 0> 140.9
SiO2 (mp-6930) <1 0 1> <1 0 0> 70.5
DyScO3 (mp-31120) <0 0 1> <0 1 0> 290.3
DyScO3 (mp-31120) <0 1 1> <1 0 0> 281.9
DyScO3 (mp-31120) <1 0 1> <1 0 0> 281.9
InAs (mp-20305) <1 0 0> <1 0 -1> 321.1
InAs (mp-20305) <1 1 0> <1 0 0> 211.4
ZnSe (mp-1190) <1 0 0> <1 1 -1> 259.7
ZnSe (mp-1190) <1 1 0> <1 0 1> 145.5
KTaO3 (mp-3614) <1 0 0> <1 1 -1> 259.7
KTaO3 (mp-3614) <1 1 0> <1 1 0> 187.9
KTaO3 (mp-3614) <1 1 1> <1 0 1> 145.5
CdS (mp-672) <0 0 1> <1 0 0> 352.3
CdS (mp-672) <1 0 0> <1 0 -1> 256.8
CdS (mp-672) <1 0 1> <0 1 0> 290.3
CdS (mp-672) <1 1 0> <1 0 0> 305.3
LiF (mp-1138) <1 0 0> <1 0 1> 218.2
LiF (mp-1138) <1 1 0> <1 1 0> 187.9
LiF (mp-1138) <1 1 1> <1 0 1> 145.5
Te2W (mp-22693) <0 0 1> <0 1 0> 174.2
Te2W (mp-22693) <0 1 0> <1 0 0> 211.4
Te2W (mp-22693) <1 0 0> <1 0 -1> 192.6
Te2W (mp-22693) <1 1 0> <1 0 1> 218.2
YVO4 (mp-19133) <0 0 1> <1 0 -1> 256.8
YVO4 (mp-19133) <1 1 0> <1 0 0> 187.9
TePb (mp-19717) <1 0 0> <0 1 0> 290.3
TePb (mp-19717) <1 1 0> <1 0 0> 187.9
Te2Mo (mp-602) <0 0 1> <1 0 0> 234.9
Te2Mo (mp-602) <1 0 0> <1 0 0> 211.4
Te2Mo (mp-602) <1 1 0> <1 0 -1> 192.6
Ag (mp-124) <1 0 0> <1 0 -1> 256.8
Ag (mp-124) <1 1 0> <0 1 0> 290.3
Ag (mp-124) <1 1 1> <1 0 1> 145.5
Bi2Te3 (mp-34202) <0 0 1> <1 1 0> 313.1
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
489 147 133 0 -10 0
147 515 142 0 10 0
133 142 535 0 -3 0
0 0 0 188 0 2
-10 10 -3 0 193 0
0 0 0 2 0 210
Compliance Tensor Sij (10-12Pa-1)
2.3 -0.5 -0.4 0 0.1 0
-0.5 2.2 -0.5 0 -0.1 0
-0.4 -0.5 2.1 0 0.0 0
0 0 0 5.3 0 -0.1
0.1 -0.1 0.0 0 5.2 0
0 0 0 -0.1 0 4.8
Shear Modulus GV
193 GPa
Bulk Modulus KV
265 GPa
Shear Modulus GR
192 GPa
Bulk Modulus KR
265 GPa
Shear Modulus GVRH
192 GPa
Bulk Modulus KVRH
265 GPa
Elastic Anisotropy
0.02
Poisson's Ratio
0.21

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
BaCaI4 (mp-753486) 0.2934 0.051 3
BaSrI4 (mp-752514) 0.2641 0.027 3
SrCaI4 (mp-850277) 0.2669 0.036 3
TaRhO4 (mp-760402) 0.2975 0.017 3
NbRhO4 (mp-756638) 0.2900 0.015 3
LiFe3(OF3)2 (mp-779990) 0.2961 0.005 4
LiV3(OF3)2 (mp-868491) 0.3188 0.000 4
LiCo3(OF3)2 (mp-850982) 0.3353 0.022 4
Ta2CrNO5 (mp-849504) 0.3367 0.065 4
TiAl(WO4)2 (mvc-634) 0.3161 0.073 4
ZrO2 (mp-776427) 0.2537 0.041 2
CeSe2 (mp-1098708) 0.1649 0.112 2
CeSe2 (mp-1080307) 0.2986 0.086 2
CeSe2 (mp-1080323) 0.0796 0.114 2
VO2 (mp-1021522) 0.2775 0.033 2
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1007/bf00248171
Sol-gel TiO2-SiO2 films were deposited on 316L stainless steel by dip coating process from a sono-catalysed sol of composition 30TiO2-70SiO2 prepared from a mixture of Ti(OC2H5)4 and Si(OC2H5)4, absol [...]
10.1007/s10853-012-6597-6
Bisphenol A polycarbonate (Makrolon RX 1805) from Bayer MaterialScience AG (Germany) was used as polymer matrix. A type of hydrophobic nano-SiO2 (Aerosil R8200) was chosen as filler, which was supplie [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition SiO2.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Si O
Final Energy/Atom
-7.6582 eV
Corrected Energy
-146.2754 eV
-146.2754 eV = -137.8480 eV (uncorrected energy) - 8.4275 eV (MP Anion Correction)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 41673
Submitted by
User remarks:
  • Silicon oxide - high pressure

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)