material

ZnTe
ID:

mp-571195
DOI:

10.17188/1276134

Warnings: [?]
  1. Large change in a lattice parameter during relaxation.
  2. Large change in volume during relaxation.
Tags: High pressure experimental phase

Material Details

Final Magnetic Moment
-0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
Non-magnetic
Formation Energy / Atom
-0.465 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.003 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
5.42 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
ZnTe
Band Gap
1.069 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
P31 [144]
Hall
P 31
Point Group
3
Crystal System
trigonal

Band Structure

Density of States
Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

sign indicates spin ↑ ↓

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
KCl (mp-23193) <1 1 0> <1 1 0> 243.2
KCl (mp-23193) <1 1 1> <0 0 1> 215.3
DyScO3 (mp-31120) <0 0 1> <1 1 0> 243.2
DyScO3 (mp-31120) <0 1 1> <1 0 0> 280.9
DyScO3 (mp-31120) <1 0 1> <1 0 0> 327.7
InAs (mp-20305) <1 0 0> <1 0 0> 187.2
InAs (mp-20305) <1 1 0> <1 1 0> 162.2
InAs (mp-20305) <1 1 1> <0 0 1> 66.2
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 215.3
LaAlO3 (mp-2920) <1 0 0> <1 0 0> 140.4
LaAlO3 (mp-2920) <1 0 1> <0 0 1> 215.3
LaAlO3 (mp-2920) <1 1 0> <1 1 0> 243.2
ZnSe (mp-1190) <1 0 0> <1 0 0> 327.7
ZnSe (mp-1190) <1 1 0> <0 0 1> 331.2
AlN (mp-661) <0 0 1> <0 0 1> 215.3
AlN (mp-661) <1 0 0> <0 0 1> 331.2
AlN (mp-661) <1 0 1> <0 0 1> 198.7
AlN (mp-661) <1 1 0> <1 0 1> 198.6
AlN (mp-661) <1 1 1> <1 0 0> 234.0
KTaO3 (mp-3614) <1 0 0> <1 0 0> 327.7
KTaO3 (mp-3614) <1 1 1> <0 0 1> 115.9
CeO2 (mp-20194) <1 0 0> <0 0 1> 149.0
CeO2 (mp-20194) <1 1 0> <1 1 0> 81.1
CeO2 (mp-20194) <1 1 1> <0 0 1> 49.7
GaAs (mp-2534) <1 0 0> <1 0 0> 327.7
GaAs (mp-2534) <1 1 0> <0 0 1> 331.2
BaF2 (mp-1029) <1 0 0> <1 0 1> 198.6
BaF2 (mp-1029) <1 1 0> <1 1 0> 162.2
BaF2 (mp-1029) <1 1 1> <0 0 1> 66.2
CdS (mp-672) <0 0 1> <0 0 1> 198.7
CdS (mp-672) <1 0 0> <1 0 0> 234.0
CdS (mp-672) <1 1 0> <1 1 1> 248.2
CdS (mp-672) <1 1 1> <0 0 1> 314.6
LiF (mp-1138) <1 0 0> <1 0 0> 327.7
LiF (mp-1138) <1 1 1> <0 0 1> 115.9
GaN (mp-804) <0 0 1> <0 0 1> 115.9
GaN (mp-804) <1 0 0> <1 0 0> 234.0
GaN (mp-804) <1 0 1> <1 1 1> 248.2
GaN (mp-804) <1 1 0> <1 0 1> 198.6
GaN (mp-804) <1 1 1> <1 0 0> 234.0
SiO2 (mp-6930) <0 0 1> <0 0 1> 66.2
SiO2 (mp-6930) <1 0 0> <0 0 1> 281.5
SiO2 (mp-6930) <1 0 1> <0 0 1> 331.2
Te2W (mp-22693) <0 1 0> <1 1 0> 162.2
Te2W (mp-22693) <0 1 1> <1 0 0> 234.0
SiO2 (mp-6930) <1 1 0> <0 0 1> 331.2
SiO2 (mp-6930) <1 1 1> <1 1 0> 162.2
TePb (mp-19717) <1 0 0> <0 0 1> 347.7
TePb (mp-19717) <1 1 0> <1 1 0> 243.2
TePb (mp-19717) <1 1 1> <0 0 1> 215.3
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

A full elastic tensor has not been calculated for this material. Registered users can view statistical-learning-based predictions of this material's bulk and shear moduli.

Once you have registered you can also "vote" for full calculation of this material's elastic properties.

Piezoelectricity

Reference for tensor and properties: Methodology
Piezoelectric Tensor eij (C/m2)
0.00243 -0.00243 0.00000 0.00000 -0.02559 0.03010
0.03010 -0.03010 -0.00000 -0.02559 0.00000 -0.00243
-0.02559 -0.02559 0.14477 -0.00000 0.00000 0.00000
Piezoelectric Modulus ‖eij‖max
0.14923 C/m2
Crystallographic Direction vmax
0.00000
0.08064
-0.99674

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij∞ (electronic contribution)
9.19 -0.00 0.00
-0.00 9.19 0.00
0.00 0.00 9.21
Dielectric Tensor εij (total)
12.20 -0.00 0.00
-0.00 12.20 0.00
0.00 0.00 12.21
Polycrystalline dielectric constant εpoly∞
(electronic contribution)
3.07
Polycrystalline dielectric constant εpoly
(total)
3.07
Refractive Index n
1.75
Potentially ferroelectric?
Unknown

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
In2AsSe (mp-676682) 0.0949 0.136 3
Cu3AsSe4 (mp-675626) 0.1061 0.000 3
In4As3Se (mp-685956) 0.0997 0.066 3
BC2N (mp-30148) 0.1015 0.542 3
BC2N (mp-1079201) 0.1010 0.887 3
ZnCu2GeS4 (mp-6408) 0.1257 0.000 4
ZnCu2GeTe4 (mp-1078420) 0.1158 0.004 4
ZnCu2GeSe4 (mp-10824) 0.1108 0.002 4
FeCu2GeSe4 (mp-1087471) 0.1168 0.038 4
ZnCu2GeTe4 (mp-12854) 0.1091 0.004 4
BeP2 (mp-27148) 0.0838 0.000 2
CuI (mp-22895) 0.0915 0.006 2
CuI (mp-673245) 0.1307 0.009 2
BC7 (mp-1095030) 0.1202 0.272 2
SiGe (mp-1096549) 0.0875 0.020 2
Si (mp-149) 0.1582 0.000 1
Sn (mp-117) 0.1582 0.000 1
C (mp-66) 0.1582 0.134 1
Ge (mp-32) 0.1582 0.000 1
Se (mp-12771) 0.1582 0.509 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1002/pssa.201228106
ZnTe epilayers were grown by the home-built MOVPE at atmospheric pressure on (100) GaAs substrates with the substrate (growth) temperatures of 390 (sample A), 420 (sample B), and 440C (sample C). Th [...]
10.1007/s00339-003-2389-9
The electrodeposition of zinc telluride (ZnTe) thin films on stainless steel foil substrates from an aqueous solution containing ZnSO4 (150mM) and TeO2 (0.5mM) is performed. For the deposition of st [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition ZnTe.

Text computed by synthesisproject.org.

Calculation Summary

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Zn Te
Final Energy/Atom
-2.6726 eV
Corrected Energy
-16.0357 eV
-16.0357 eV = -16.0357 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 80076
Submitted by
User remarks:
  • High pressure experimental phase
  • Zinc telluride - I

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)