material

Cu2S
ID:

mp-618991
DOI:

10.17188/1277958

Tags: Chalcocite-Q Copper(I) sulfide

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-0.311 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.048 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
5.90 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
Cu7S4 + Cu
Band Gap
0.502 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
P43212 [96]
Hall
P 4nw 2abw
Point Group
422
Crystal System
tetragonal

Electronic Structure

Topological data for ICSD ID 16550 from Topological Materials Database
Topological Classification
trivial*
Subclassification
LCEBR†
* trivial insulator or metal
† Linear Combination of Elementary Band Representations

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
substrate material substrate orientation film orientation elastic energy [meV] MCIA† [Å2]
C (mp-66) <1 0 0> <0 0 1> 0.001 63.8
BaTiO3 (mp-5986) <1 1 1> <0 0 1> 0.002 143.5
Ag (mp-124) <1 1 0> <1 0 0> 0.003 269.3
BaTiO3 (mp-5986) <1 1 0> <1 1 0> 0.003 190.4
BaTiO3 (mp-5986) <1 0 0> <1 0 0> 0.003 134.6
BaTiO3 (mp-5986) <0 0 1> <0 0 1> 0.009 15.9
TbScO3 (mp-31119) <1 1 0> <0 0 1> 0.011 63.8
Au (mp-81) <1 1 0> <1 0 0> 0.014 269.3
GdScO3 (mp-5690) <1 1 0> <0 0 1> 0.020 63.8
InP (mp-20351) <1 0 0> <1 0 1> 0.025 142.9
YVO4 (mp-19133) <0 0 1> <0 0 1> 0.033 207.3
SiC (mp-8062) <1 1 0> <0 0 1> 0.033 350.9
NdGaO3 (mp-3196) <1 0 0> <1 1 1> 0.035 130.9
BN (mp-984) <1 0 1> <1 0 0> 0.035 179.5
PbS (mp-21276) <1 0 0> <1 0 1> 0.039 142.9
DyScO3 (mp-31120) <1 1 0> <0 0 1> 0.040 63.8
LiGaO2 (mp-5854) <1 1 1> <1 0 0> 0.041 224.4
BN (mp-984) <1 1 0> <0 0 1> 0.043 334.9
ZnO (mp-2133) <1 1 1> <1 1 0> 0.044 63.5
TiO2 (mp-2657) <1 0 0> <1 1 1> 0.048 261.8
MgF2 (mp-1249) <1 0 0> <1 1 0> 0.048 190.4
BaF2 (mp-1029) <1 0 0> <0 0 1> 0.050 79.7
ZnO (mp-2133) <1 0 0> <0 0 1> 0.050 175.4
CdS (mp-672) <1 1 1> <0 0 1> 0.055 207.3
NdGaO3 (mp-3196) <1 0 1> <0 0 1> 0.057 159.5
ZrO2 (mp-2858) <0 1 0> <0 0 1> 0.060 366.8
Y3Fe5O12 (mp-19648) <1 0 0> <0 0 1> 0.060 159.5
MgF2 (mp-1249) <1 0 1> <1 1 1> 0.062 130.9
MgF2 (mp-1249) <1 1 1> <0 0 1> 0.071 239.2
ZnO (mp-2133) <1 1 0> <0 0 1> 0.081 366.8
SiC (mp-11714) <0 0 1> <0 0 1> 0.098 223.3
MgO (mp-1265) <1 0 0> <1 0 1> 0.098 142.9
SiC (mp-7631) <0 0 1> <0 0 1> 0.100 223.3
Te2Mo (mp-602) <0 0 1> <0 0 1> 0.111 207.3
GaN (mp-804) <1 1 0> <1 1 1> 0.114 261.8
TeO2 (mp-2125) <0 0 1> <0 0 1> 0.116 31.9
Ga2O3 (mp-886) <1 0 1> <0 0 1> 0.119 319.0
WS2 (mp-224) <1 1 0> <1 0 0> 0.124 314.1
NaCl (mp-22862) <1 0 0> <0 0 1> 0.124 31.9
GaSe (mp-1943) <0 0 1> <1 0 0> 0.124 224.4
TiO2 (mp-2657) <1 1 0> <1 0 1> 0.125 238.1
CdS (mp-672) <1 0 0> <0 0 1> 0.127 255.2
SiO2 (mp-6930) <1 0 0> <1 0 0> 0.141 224.4
ZnSe (mp-1190) <1 1 1> <1 0 1> 0.142 285.8
GaAs (mp-2534) <1 1 1> <1 0 1> 0.150 285.8
MgF2 (mp-1249) <1 1 0> <0 0 1> 0.151 143.5
Bi2Se3 (mp-541837) <0 0 1> <0 0 1> 0.158 319.0
MoSe2 (mp-1634) <0 0 1> <0 0 1> 0.158 47.8
WS2 (mp-224) <1 1 1> <0 0 1> 0.158 79.7
WSe2 (mp-1821) <0 0 1> <0 0 1> 0.158 47.8
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
137 81 74 0 0 0
81 137 74 0 0 0
74 74 112 0 0 0
0 0 0 36 0 0
0 0 0 0 36 0
0 0 0 0 0 22
Compliance Tensor Sij (10-12Pa-1)
13.2 -4.9 -5.5 0 0 0
-4.9 13.2 -5.5 0 0 0
-5.5 -5.5 16.2 0 0 0
0 0 0 27.5 0 0
0 0 0 0 27.5 0
0 0 0 0 0 44.8
Shear Modulus GV
29 GPa
Bulk Modulus KV
94 GPa
Shear Modulus GR
28 GPa
Bulk Modulus KR
92 GPa
Shear Modulus GVRH
29 GPa
Bulk Modulus KVRH
93 GPa
Elastic Anisotropy
0.24
Poisson's Ratio
0.36

Piezoelectricity

Reference for tensor and properties: Methodology
Piezoelectric Tensor eij (C/m2)
0.00000 0.00000 0.00000 -7.69014 0.00000 0.00000
0.00000 0.00000 0.00000 0.00000 7.69014 0.00000
0.00000 0.00000 0.00000 0.00000 0.00000 0.00000
Piezoelectric Modulus ‖eij‖max
7.69014 C/m2
Crystallographic Direction vmax
1.00000
0.00000
0.00000

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij∞ (electronic contribution)
12.90 0.00 0.00
0.00 12.90 0.00
0.00 0.00 13.36
Dielectric Tensor εij (total)
20.76 0.00 0.00
0.00 20.76 0.00
0.00 0.00 15.90
Polycrystalline dielectric constant εpoly∞
(electronic contribution)
13.05
Polycrystalline dielectric constant εpoly
(total)
19.14
Refractive Index n
3.61
Potentially ferroelectric?
Unknown

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
ErNbO4 (mp-756457) 0.6621 0.024 3
ScNbO4 (mp-553961) 0.6667 0.000 3
BaCaI4 (mp-766365) 0.6393 0.069 3
LuTaO4 (mp-5489) 0.6712 0.000 3
ZnMoO4 (mp-1095420) 0.6670 0.019 3
InCu(MoO4)2 (mp-618075) 0.6840 0.037 4
PdF2 (mp-20284) 0.6377 0.041 2
PtO2 (mp-1095224) 0.6262 0.085 2
MgF2 (mp-1746) 0.6247 0.066 2
Cu2Se (mp-1021499) 0.4510 0.113 2
SnO2 (mp-697) 0.6253 0.101 2
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1016/j.mssp.2014.08.006
A double layer porous TiO2 thin film is prepared on top of Fluorine doped Tin Oxide (FTO) coated glass plate of sheet resistance 10/ by doctor-blading. 20nm sized TiO2 powder (Degusssa P-25) is us [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition Cu2S.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Cu_pv S
Final Energy/Atom
-4.2013 eV
Corrected Energy
-53.0699 eV
-53.0699 eV = -50.4160 eV (uncorrected energy) - 2.6538 eV (MP Anion Correction)

Detailed input parameters and outputs for all calculations

Show JSON History Show BibTex Citation Download BibTex Citation
ICSD IDs
  • 16550
Submitted by
User remarks:
  • Chalcocite-Q
  • Copper(I) sulfide

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)