mp-7849: AlAsO4 (tetragonal, I-4, 82)

material

AlAsO₄

ID:

mp-7849

DOI:

10.17188/1307750

Electronic Structure
X-Ray Diffraction
Substrates
Elasticity
Piezoelectricity
Dielectric Properties
Similar Structures
Calculation Summary
User Data
Provenance/Citation

Warnings: [?]

Volume change > 20.0%

Tags: Aluminium arsenate

Material Details

Final Magnetic Moment 0.000 μ_B Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering Unknown
Formation Energy / Atom -2.459 eV Calculated formation energy from the elements normalized to per atom in the unit cell.
Energy Above Hull / Atom 0.000 eV The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.
Density 2.70 g/cm³ The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)
Decomposes To Stable
Band Gap 4.248 eV In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin I4 [82]
Hall I 4
Point Group 4
Crystal System tetragonal

Band Structure

Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

sign indicates spin ↑ ↓

X-Ray Diffraction

Select radiation source:

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:

substrate material	substrate orientation	film orientation	elastic energy [meV]	MCIA^† [Å²]
CdSe (mp-2691)	<1 0 0>	<0 0 1>	0.000	347.5
MgAl₂O₄ (mp-3536)	<1 0 0>	<0 0 1>	0.000	133.7
GaSb (mp-1156)	<1 0 0>	<0 0 1>	0.000	347.5
LiF (mp-1138)	<1 0 0>	<0 0 1>	0.000	133.7
GaSe (mp-1943)	<1 0 1>	<1 0 0>	0.001	276.0
PbSe (mp-2201)	<1 0 0>	<0 0 1>	0.002	347.5
Ge (mp-32)	<1 0 0>	<0 0 1>	0.005	133.7
Mg (mp-153)	<1 1 1>	<0 0 1>	0.007	240.6
TePb (mp-19717)	<1 0 0>	<0 0 1>	0.008	213.8
Ge(Bi₃O₅)₄ (mp-23352)	<1 0 0>	<0 0 1>	0.008	106.9
LiGaO₂ (mp-5854)	<1 0 1>	<1 0 0>	0.009	315.5
SiC (mp-7631)	<1 0 0>	<1 0 0>	0.010	236.6
ZnTe (mp-2176)	<1 0 0>	<0 0 1>	0.011	347.5
Fe₂O₃ (mp-24972)	<1 0 0>	<1 0 1>	0.012	142.9
InAs (mp-20305)	<1 0 0>	<0 0 1>	0.013	347.5
GaAs (mp-2534)	<1 0 0>	<0 0 1>	0.014	133.7
ZnO (mp-2133)	<1 0 1>	<0 0 1>	0.014	294.0
TiO₂ (mp-2657)	<0 0 1>	<0 0 1>	0.018	106.9
ZnTe (mp-2176)	<1 1 1>	<1 1 0>	0.019	334.6
KP(HO₂)₂ (mp-23959)	<1 1 1>	<1 0 0>	0.020	157.7
ZnSe (mp-1190)	<1 0 0>	<0 0 1>	0.022	133.7
CdS (mp-672)	<0 0 1>	<1 1 0>	0.022	278.8
InAs (mp-20305)	<1 1 1>	<1 1 0>	0.023	334.6
Fe₂O₃ (mp-24972)	<1 0 1>	<1 1 0>	0.025	223.1
LiAlO₂ (mp-3427)	<1 1 0>	<1 1 0>	0.025	278.8
YVO₄ (mp-19133)	<1 0 0>	<1 1 0>	0.025	278.8
Au (mp-81)	<1 1 0>	<1 1 0>	0.025	223.1
BN (mp-984)	<1 1 0>	<1 1 0>	0.027	167.3
MgO (mp-1265)	<1 0 0>	<1 0 0>	0.031	236.6
C (mp-66)	<1 0 0>	<0 0 1>	0.031	213.8
CdS (mp-672)	<1 1 0>	<1 1 1>	0.031	247.4
Te₂W (mp-22693)	<1 1 0>	<1 1 0>	0.035	111.5
YAlO₃ (mp-3792)	<0 1 1>	<1 0 1>	0.035	47.6
LaF₃ (mp-905)	<1 0 0>	<0 0 1>	0.037	53.5
Te₂Mo (mp-602)	<1 0 1>	<1 0 1>	0.039	333.5
Ag (mp-124)	<1 1 0>	<1 1 0>	0.040	223.1
Au (mp-81)	<1 1 1>	<0 0 1>	0.041	213.8
C (mp-48)	<0 0 1>	<1 1 1>	0.041	247.4
PbS (mp-21276)	<1 1 0>	<1 1 1>	0.041	309.2
LiTaO₃ (mp-3666)	<1 0 0>	<1 0 1>	0.043	142.9
CeO₂ (mp-20194)	<1 1 0>	<1 1 0>	0.045	167.3
C (mp-48)	<1 0 1>	<0 0 1>	0.046	294.0
CeO₂ (mp-20194)	<1 0 0>	<1 0 0>	0.046	118.3
MgF₂ (mp-1249)	<1 1 0>	<1 1 0>	0.047	223.1
MgO (mp-1265)	<1 1 1>	<1 0 0>	0.047	157.7
Si (mp-149)	<1 1 0>	<1 1 0>	0.047	167.3
Si (mp-149)	<1 0 0>	<1 0 0>	0.048	118.3
SiC (mp-7631)	<1 0 1>	<1 0 0>	0.050	236.6
MoS₂ (mp-1434)	<1 0 0>	<1 0 0>	0.051	276.0
InP (mp-20351)	<1 0 0>	<0 0 1>	0.056	347.5

Up to 50 entries displayed.

^†minimal coincident interface area.

Elasticity

Reference for tensor and properties:

Visualize with ELATE

Stiffness Tensor Cij (GPa)
57	-10	19	-0	-0	-0
-10	57	19	0	0	0
19	19	51	0	-0	0
-0	0	0	19	0	-0
-0	0	-0	0	19	-0
-0	0	0	-0	-0	18

Compliance Tensor Sij (10^-12Pa^-1)
22.5	7.7	-11.3	0	0	0.3
7.7	22.5	-11.3	0	0	-0.3
-11.3	-11.3	28	0	0	0
0	0	0	53.2	0	0
0	0	0	0	53.2	0
0.3	-0.3	0	0	0	56.3

Shear Modulus G_V 20 GPa	Bulk Modulus K_V 25 GPa
Shear Modulus G_R 18 GPa	Bulk Modulus K_R 23 GPa
Shear Modulus G_VRH 19 GPa	Bulk Modulus K_VRH 24 GPa
Elastic Anisotropy 0.74	Poisson's Ratio 0.18

Piezoelectricity

Reference for tensor and properties: Methodology

Piezoelectric Tensor e_ij (C/m²)
0.00000	0.00000	0.03780	-0.08615	0.00000
0.00000	0.00000	0.08615	0.03780	0.00000
-0.15207	0.15207	0.00000	0.00000	0.22270

Piezoelectric Modulus ‖e_ij‖_max

0.10812 C/m²

Crystallographic Direction v_max
1.00000
-0.28571
0.71429

Dielectric Properties

Reference for tensor and properties: Methodology

Dielectric Tensor ε_ij^∞ (electronic contribution)
2.41	-0.01	-0.01
-0.01	2.42	0.01
-0.01	0.01	2.43

Dielectric Tensor ε_ij (total)
4.20	-0.14	-0.16
-0.14	4.30	0.23
-0.16	0.23	4.37

Polycrystalline dielectric constant ε_poly^∞
(electronic contribution)

2.42

Polycrystalline dielectric constant ε_poly
(total)

4.29

Refractive Index n

1.56

Potentially ferroelectric?

True

Similar Structures

Explanation of dissimilarity measure: Documentation.

material	dissimilarity	E_hull	# of elements
Rb₂Al₂Si₃O₁₀ (mp-975622)	0.6905	0.018	4
TcH₄NO₄ (mp-23925)	0.6690	0.027	4
LiB(SO₄)₂ (mp-1020106)	0.5724	0.000	4
KSi₂BO₆ (mp-1019889)	0.6272	0.000	4
H₄INO₄ (mp-24087)	0.6233	0.301	4
SiO₂ (mp-558374)	0.3978	0.028	2
GeO₂ (mp-223)	0.4236	0.000	2
SiO₂ (mp-546546)	0.3742	0.030	2
GeO₂ (mp-733)	0.4175	0.000	2
GeO₂ (mp-7812)	0.3736	0.001	2
BPO₄ (mp-3589)	0.0659	0.000	3
BeSO₄ (mp-5046)	0.1074	0.000	3
GaPO₄ (mp-553932)	0.1772	0.007	3
GaPO₄ (mp-677335)	0.0974	0.000	3
V₃FeO₈ (mp-775001)	0.1929	0.080	3
RbZnB(PO₄)₂ (mp-557658)	0.6748	0.000	5
CsZnB(PO₄)₂ (mp-560244)	0.6335	0.000	5

Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). E_hull: energy above hull per atom [eV].

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type GGA	Energy Cutoff 520 eV
# of K-points 35	U Values --
Pseudopotentials VASP PAW: O Al As	Final Energy/Atom -6.6824 eV
Corrected Energy -42.9036 eV How do we arrive at this value? -42.9036 eV = -40.0944 eV (uncorrected energy) - 2.8092 eV (MP Anion Correction) Definitions of corrections

Detailed input parameters and outputs for all calculations

User Data

dtu

Authors:

Ivano Castelli

name	conditions	value	ref
band gap	type indirect method Kohn-Sham functional GLLB-SC	5.52 eV	Citation 1 @article {AENM:AENM201400915, author = {Castelli, Ivano E. and Huser, Falco and Pandey, Mohnish and Li, Hong and Thygesen, Kristian S. and Seger, Brian and Jain, Anubhav and Persson, Kristin A. and Ceder, Gerbrand and Jacobsen, Karsten W.}, title = {New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations}, journal = {Advanced Energy Materials}, volume = {5}, number = {2}, issn = {1614-6840}, url = {http://dx.doi.org/10.1002/aenm.201400915}, doi = {10.1002/aenm.201400915}, pages = {1400915--n/a}, keywords = {photoelectrochemical cells, light-harvesting materials, high-throughput screening, Pourbaix diagrams, stability}, year = {2015}, note = {1400915}, } Citation 2 @article{PhysRevA.51.1944, title = {Self-consistent approximation to the Kohn-Sham exchange potential}, author = {Gritsenko, Oleg and van Leeuwen, Robert and van Lenthe, Erik and Baerends, Evert Jan}, journal = {Phys. Rev. A}, volume = {51}, issue = {3}, pages = {1944--1954}, numpages = {0}, year = {1995}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevA.51.1944}, url = {http://link.aps.org/doi/10.1103/PhysRevA.51.1944} }
band gap	type direct method Kohn-Sham functional GLLB-SC	5.52 eV	Citation 1 @article {AENM:AENM201400915, author = {Castelli, Ivano E. and Huser, Falco and Pandey, Mohnish and Li, Hong and Thygesen, Kristian S. and Seger, Brian and Jain, Anubhav and Persson, Kristin A. and Ceder, Gerbrand and Jacobsen, Karsten W.}, title = {New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations}, journal = {Advanced Energy Materials}, volume = {5}, number = {2}, issn = {1614-6840}, url = {http://dx.doi.org/10.1002/aenm.201400915}, doi = {10.1002/aenm.201400915}, pages = {1400915--n/a}, keywords = {photoelectrochemical cells, light-harvesting materials, high-throughput screening, Pourbaix diagrams, stability}, year = {2015}, note = {1400915}, } Citation 2 @article{PhysRevA.51.1944, title = {Self-consistent approximation to the Kohn-Sham exchange potential}, author = {Gritsenko, Oleg and van Leeuwen, Robert and van Lenthe, Erik and Baerends, Evert Jan}, journal = {Phys. Rev. A}, volume = {51}, issue = {3}, pages = {1944--1954}, numpages = {0}, year = {1995}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevA.51.1944}, url = {http://link.aps.org/doi/10.1103/PhysRevA.51.1944} }
band gap	type indirect method quasiparticle functional GLLB-SC	7.73 eV	Citation 1 @article {AENM:AENM201400915, author = {Castelli, Ivano E. and Huser, Falco and Pandey, Mohnish and Li, Hong and Thygesen, Kristian S. and Seger, Brian and Jain, Anubhav and Persson, Kristin A. and Ceder, Gerbrand and Jacobsen, Karsten W.}, title = {New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations}, journal = {Advanced Energy Materials}, volume = {5}, number = {2}, issn = {1614-6840}, url = {http://dx.doi.org/10.1002/aenm.201400915}, doi = {10.1002/aenm.201400915}, pages = {1400915--n/a}, keywords = {photoelectrochemical cells, light-harvesting materials, high-throughput screening, Pourbaix diagrams, stability}, year = {2015}, note = {1400915}, } Citation 2 @article{PhysRevA.51.1944, title = {Self-consistent approximation to the Kohn-Sham exchange potential}, author = {Gritsenko, Oleg and van Leeuwen, Robert and van Lenthe, Erik and Baerends, Evert Jan}, journal = {Phys. Rev. A}, volume = {51}, issue = {3}, pages = {1944--1954}, numpages = {0}, year = {1995}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevA.51.1944}, url = {http://link.aps.org/doi/10.1103/PhysRevA.51.1944} }
band gap	type direct method quasiparticle functional GLLB-SC	7.73 eV	Citation 1 @article {AENM:AENM201400915, author = {Castelli, Ivano E. and Huser, Falco and Pandey, Mohnish and Li, Hong and Thygesen, Kristian S. and Seger, Brian and Jain, Anubhav and Persson, Kristin A. and Ceder, Gerbrand and Jacobsen, Karsten W.}, title = {New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations}, journal = {Advanced Energy Materials}, volume = {5}, number = {2}, issn = {1614-6840}, url = {http://dx.doi.org/10.1002/aenm.201400915}, doi = {10.1002/aenm.201400915}, pages = {1400915--n/a}, keywords = {photoelectrochemical cells, light-harvesting materials, high-throughput screening, Pourbaix diagrams, stability}, year = {2015}, note = {1400915}, } Citation 2 @article{PhysRevA.51.1944, title = {Self-consistent approximation to the Kohn-Sham exchange potential}, author = {Gritsenko, Oleg and van Leeuwen, Robert and van Lenthe, Erik and Baerends, Evert Jan}, journal = {Phys. Rev. A}, volume = {51}, issue = {3}, pages = {1944--1954}, numpages = {0}, year = {1995}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevA.51.1944}, url = {http://link.aps.org/doi/10.1103/PhysRevA.51.1944} }
derivative discontinuity	functional GLLB-SC	2.21 eV	Citation 1 @article {AENM:AENM201400915, author = {Castelli, Ivano E. and Huser, Falco and Pandey, Mohnish and Li, Hong and Thygesen, Kristian S. and Seger, Brian and Jain, Anubhav and Persson, Kristin A. and Ceder, Gerbrand and Jacobsen, Karsten W.}, title = {New Light-Harvesting Materials Using Accurate and Efficient Bandgap Calculations}, journal = {Advanced Energy Materials}, volume = {5}, number = {2}, issn = {1614-6840}, url = {http://dx.doi.org/10.1002/aenm.201400915}, doi = {10.1002/aenm.201400915}, pages = {1400915--n/a}, keywords = {photoelectrochemical cells, light-harvesting materials, high-throughput screening, Pourbaix diagrams, stability}, year = {2015}, note = {1400915}, } Citation 2 @article{PhysRevA.51.1944, title = {Self-consistent approximation to the Kohn-Sham exchange potential}, author = {Gritsenko, Oleg and van Leeuwen, Robert and van Lenthe, Erik and Baerends, Evert Jan}, journal = {Phys. Rev. A}, volume = {51}, issue = {3}, pages = {1944--1954}, numpages = {0}, year = {1995}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevA.51.1944}, url = {http://link.aps.org/doi/10.1103/PhysRevA.51.1944} }

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ICSD IDs

24512

Submitted by

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)

Stiffness Tensor Cij (GPa)
57	-10	19	-0	-0	-0
-10	57	19	0	0	0
19	19	51	0	-0	0
-0	0	0	19	0	-0
-0	0	-0	0	19	-0
-0	0	0	-0	-0	18

Stiffness Tensor Cij (GPa)
57	-10	19	-0	-0	-0
-10	57	19	0	0	0
19	19	51	0	-0	0
-0	0	0	19	0	-0
-0	0	-0	0	19	-0
-0	0	0	-0	-0	18

material

AlAsO4

ID:

mp-7849

DOI:

10.17188/1307750

BibTeX Citation

Material Details

Final Magnetic Moment

Magnetic Ordering

Formation Energy / Atom

Energy Above Hull / Atom

Density

Decomposes To

Band Gap

Space Group

Hermann Mauguin

Hall

Point Group

Crystal System

Band Structure

Density of States

X-Ray Diffraction

Substrates

Elasticity

Stiffness Tensor Cij (GPa)

Compliance Tensor Sij (10-12Pa-1)

Shear Modulus GV

Bulk Modulus KV

Shear Modulus GR

Bulk Modulus KR

Shear Modulus GVRH

Bulk Modulus KVRH

Elastic Anisotropy

Poisson's Ratio

Piezoelectricity

Piezoelectric Tensor eij (C/m2)

Piezoelectric Modulus ‖eij‖max

Crystallographic Direction vmax

Dielectric Properties

Dielectric Tensor εij∞ (electronic contribution)

Dielectric Tensor εij (total)

Polycrystalline dielectric constant εpoly∞ (electronic contribution)

Polycrystalline dielectric constant εpoly (total)

Refractive Index n

Potentially ferroelectric?

Similar Structures

Calculation Summary

Elasticity

Structure Optimization

Run Type

Energy Cutoff

# of K-points

U Values

Pseudopotentials

Final Energy/Atom

Corrected Energy

Energy Corrections

MPRelaxSet Potcar Correction

MP Gas Correction

MP Anion Correction

MP Advanced Correction

Detailed input parameters and outputs for all calculations

User Data

dtu

Citation 1

Citation 2

Citation 1

Citation 2

Citation 1

Citation 2

Citation 1

Citation 2

Citation 1

Citation 2

JSON History

BibTex Citation

ICSD IDs

Submitted by

AlAsO₄

Compliance Tensor Sij (10^-12Pa^-1)

Shear Modulus G_V

Bulk Modulus K_V

Shear Modulus G_R

Bulk Modulus K_R

Shear Modulus G_VRH

Bulk Modulus K_VRH

Piezoelectric Tensor e_ij (C/m²)

Piezoelectric Modulus ‖e_ij‖_max

Crystallographic Direction v_max

Dielectric Tensor ε_ij^∞ (electronic contribution)

Dielectric Tensor ε_ij (total)

Polycrystalline dielectric constant ε_poly^∞
(electronic contribution)

Polycrystalline dielectric constant ε_poly
(total)

Stiffness Tensor Cij (GPa)
57	-10	19	-0	-0	-0
-10	57	19	0	0	0
19	19	51	0	-0	0
-0	0	0	19	0	-0
-0	0	-0	0	19	-0
-0	0	0	-0	-0	18