material

Cu3Sn
ID:

mp-838
DOI:

10.17188/1308064

Tags: Copper tin (3/1) - HT Copper tin (3/1)

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
0.066 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.079 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
8.85 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
CuSn + Cu
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Fm3m [225]
Hall
-F 4 2 3
Point Group
m3m
Crystal System
cubic

Electronic Structure

Topological data for ICSD ID 185003 from Topological Materials Database
Topological Classification
SM*
Subclassification
ESFD†
Crossing Type
Point
* Semimetal
† Enforced Semimetal with Fermi point Degeneracy
Band Structure
Density of States
Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

sign indicates spin ↑ ↓

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
AlN (mp-661) <0 0 1> <1 1 1> 261.7
AlN (mp-661) <1 0 0> <1 0 0> 188.9
CeO2 (mp-20194) <1 0 0> <1 0 0> 151.1
CeO2 (mp-20194) <1 1 0> <1 1 0> 160.3
CeO2 (mp-20194) <1 1 1> <1 1 1> 196.3
GaAs (mp-2534) <1 0 0> <1 0 0> 302.2
BaF2 (mp-1029) <1 0 0> <1 0 0> 37.8
BaF2 (mp-1029) <1 1 0> <1 1 0> 53.4
BaF2 (mp-1029) <1 1 1> <1 1 1> 65.4
GaN (mp-804) <0 0 1> <1 0 0> 188.9
GaN (mp-804) <1 0 0> <1 0 0> 188.9
GaN (mp-804) <1 0 1> <1 1 0> 267.1
GaN (mp-804) <1 1 0> <1 1 0> 320.5
GaN (mp-804) <1 1 1> <1 0 0> 151.1
SiO2 (mp-6930) <0 0 1> <1 1 1> 65.4
SiO2 (mp-6930) <1 0 1> <1 1 1> 327.1
SiO2 (mp-6930) <1 1 1> <1 0 0> 264.4
KCl (mp-23193) <1 0 0> <1 0 0> 340.0
DyScO3 (mp-31120) <1 1 0> <1 0 0> 302.2
InAs (mp-20305) <1 0 0> <1 0 0> 37.8
InAs (mp-20305) <1 1 0> <1 1 0> 53.4
InAs (mp-20305) <1 1 1> <1 1 1> 65.4
CdS (mp-672) <0 0 1> <1 1 1> 196.3
LiF (mp-1138) <1 0 0> <1 0 0> 151.1
LiF (mp-1138) <1 1 0> <1 1 0> 213.7
LiF (mp-1138) <1 1 1> <1 1 1> 196.3
Te2W (mp-22693) <0 0 1> <1 1 0> 267.1
Te2W (mp-22693) <0 1 0> <1 1 1> 261.7
ZnSe (mp-1190) <1 0 0> <1 0 0> 302.2
KTaO3 (mp-3614) <1 0 0> <1 0 0> 151.1
KTaO3 (mp-3614) <1 1 0> <1 1 0> 213.7
KTaO3 (mp-3614) <1 1 1> <1 1 1> 196.3
TePb (mp-19717) <1 0 0> <1 0 0> 340.0
Te2Mo (mp-602) <0 0 1> <1 0 0> 264.4
Te2Mo (mp-602) <1 0 0> <1 1 1> 261.7
Te2Mo (mp-602) <1 1 0> <1 0 0> 188.9
Te2Mo (mp-602) <1 1 1> <1 0 0> 188.9
Ag (mp-124) <1 0 0> <1 0 0> 151.1
Ag (mp-124) <1 1 0> <1 1 0> 213.7
Ag (mp-124) <1 1 1> <1 1 1> 261.7
Bi2Te3 (mp-34202) <0 0 1> <1 0 0> 264.4
GaSe (mp-1943) <0 0 1> <1 1 1> 261.7
BN (mp-984) <0 0 1> <1 1 1> 65.4
BN (mp-984) <1 0 1> <1 0 0> 302.2
BN (mp-984) <1 1 0> <1 1 1> 65.4
BN (mp-984) <1 1 1> <1 0 0> 264.4
Bi2Se3 (mp-541837) <0 0 1> <1 1 1> 196.3
MoS2 (mp-1434) <0 0 1> <1 0 0> 188.9
Al (mp-134) <1 0 0> <1 0 0> 151.1
Al (mp-134) <1 1 0> <1 1 0> 213.7
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
95 113 113 0 0 0
113 95 113 0 0 0
113 113 95 0 0 0
0 0 0 57 0 0
0 0 0 0 57 0
0 0 0 0 0 57
Compliance Tensor Sij (10-12Pa-1)
-35.8 19.5 19.5 0 0 0
19.5 -35.8 19.5 0 0 0
19.5 19.5 -35.8 0 0 0
0 0 0 17.4 0 0
0 0 0 0 17.4 0
0 0 0 0 0 17.4
Shear Modulus GV
31 GPa
Bulk Modulus KV
107 GPa
Shear Modulus GR
-30 GPa
Bulk Modulus KR
107 GPa
Shear Modulus GVRH
1 GPa
Bulk Modulus KVRH
107 GPa
Elastic Anisotropy
-10.20
Poisson's Ratio
0.50

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
DyHoIn2 (mp-984767) 0.0000 0.000 3
Yb2ZnPb (mp-977424) 0.0000 0.000 3
BeW2Cl (mp-631535) 0.0000 1.612 3
ReRuCl2 (mp-631417) 0.0000 1.815 3
SrTa2Mn (mp-631358) 0.0000 1.215 3
TiFeCoSb (mp-998973) 0.0000 0.198 4
TiAlFeCo (mp-998980) 0.0000 0.000 4
TiFeCoGe (mp-1018012) 0.0000 0.026 4
VFeCoSi (mp-1066609) 0.0000 0.011 4
VFeCoSb (mp-1066862) 0.0000 0.178 4
Rb3Pm (mp-983446) 0.0000 0.653 2
Mn3Sn (mp-1018023) 0.0000 0.233 2
Pd3N (mp-999296) 0.0000 1.018 2
NbCr3 (mp-999390) 0.0000 0.118 2
Mn3Ga (mp-999550) 0.0000 0.126 2
Cu (mp-998890) 0.0000 0.035 1
Kr (mp-974400) 0.0000 0.002 1
H2 (mp-632250) 0.0000 0.000 1
Ge (mp-998883) 0.0000 0.346 1
U (mp-108) 0.0000 0.275 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1002/chem.201406154
Copper(II) acetylacetonate (Cu(acac)2) and tin(II) acetylacetonate (Sn(acac)2) are used as precursors for Cu3Sn alloy nanocrystals. OAM is introduced as coordinating ligand, reducing agent, and cappin [...]
10.1007/s10854-014-2221-7
The Cu3Sn compound was prepared from 99.99% Cu and 99.9% Sn base metals by melting in an alumina chamber furnace under vacuum. The metals were weighted to obtain the overall composition Cu-24.7at% [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition Cu3Sn.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Cu_pv Sn_d
Final Energy/Atom
-4.0110 eV
Corrected Energy
-16.0441 eV
-16.0441 eV = -16.0441 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 185003
  • 629268
  • 103101
Submitted by
User remarks:
  • Copper tin (3/1)

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)