material

VN

ID:

mp-925

DOI:

10.17188/1282186


Tags: Vanadium(III) nitride - NaCl-type Vanadium(III) nitride - nanocrystalline Vanadium(III) nitride Vanadium nitride (1/1) Vanadium nitride - delta

Material Details

Final Magnetic Moment
-0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.

Magnetic Ordering
Unknown
Formation Energy / Atom
-1.164 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.192 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
6.15 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
VN
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
Fm3m [225]
Hall
-F 4 2 3
Point Group
m3m
Crystal System
cubic

Band Structure

Density of States
Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

sign indicates spin ↑ ↓

  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
substrate material substrate orientation film orientation elastic energy [meV] MCIA [Å2]
CaCO3 (mp-3953) <0 0 1> <1 1 1> 0.000 88.4
GaSe (mp-1943) <0 0 1> <1 1 1> 0.001 88.4
ZnTe (mp-2176) <1 1 0> <1 1 0> 0.001 216.6
ZnTe (mp-2176) <1 0 0> <1 0 0> 0.001 153.1
C (mp-66) <1 1 1> <1 1 1> 0.002 88.4
C (mp-66) <1 1 0> <1 1 0> 0.002 72.2
InAs (mp-20305) <1 1 0> <1 1 0> 0.004 216.6
SiC (mp-8062) <1 1 0> <1 1 0> 0.004 216.6
InAs (mp-20305) <1 0 0> <1 0 0> 0.004 153.1
SiC (mp-8062) <1 0 0> <1 0 0> 0.004 153.1
SiC (mp-11714) <1 1 0> <1 1 0> 0.008 216.6
SrTiO3 (mp-4651) <1 0 0> <1 1 0> 0.011 264.7
C (mp-48) <0 0 1> <1 1 1> 0.011 206.3
CeO2 (mp-20194) <1 1 1> <1 1 1> 0.015 206.3
Si (mp-149) <1 1 1> <1 1 1> 0.019 206.3
Mg (mp-153) <1 1 1> <1 0 0> 0.019 272.2
LiAlO2 (mp-3427) <0 0 1> <1 0 0> 0.025 136.1
BaF2 (mp-1029) <1 1 1> <1 1 1> 0.032 206.3
KP(HO2)2 (mp-23959) <0 1 1> <1 1 0> 0.042 216.6
CaF2 (mp-2741) <1 0 0> <1 0 0> 0.047 153.1
C (mp-48) <1 1 1> <1 1 0> 0.063 168.4
Ga2O3 (mp-886) <1 0 -1> <1 0 0> 0.069 153.1
CdSe (mp-2691) <1 1 0> <1 1 0> 0.069 216.6
CdSe (mp-2691) <1 0 0> <1 0 0> 0.074 153.1
CsI (mp-614603) <1 0 0> <1 0 0> 0.077 306.3
Ga2O3 (mp-886) <1 0 0> <1 1 0> 0.078 72.2
GdScO3 (mp-5690) <0 0 1> <1 1 0> 0.095 96.3
LiGaO2 (mp-5854) <1 0 1> <1 0 0> 0.098 136.1
CsI (mp-614603) <1 1 0> <1 1 0> 0.101 264.7
GaSb (mp-1156) <1 1 0> <1 1 0> 0.106 216.6
GaP (mp-2490) <1 0 0> <1 0 0> 0.112 153.1
BN (mp-984) <0 0 1> <1 1 1> 0.114 88.4
GaSb (mp-1156) <1 0 0> <1 0 0> 0.116 153.1
AlN (mp-661) <1 1 0> <1 1 0> 0.138 216.6
GaN (mp-804) <0 0 1> <1 1 1> 0.144 117.9
Ga2O3 (mp-886) <1 1 0> <1 0 0> 0.153 221.2
YAlO3 (mp-3792) <0 1 1> <1 0 0> 0.154 340.3
BN (mp-984) <1 0 0> <1 0 0> 0.159 289.3
SiO2 (mp-6930) <0 0 1> <1 1 1> 0.160 88.4
SrTiO3 (mp-4651) <0 0 1> <1 0 0> 0.163 153.1
PbSe (mp-2201) <1 1 0> <1 1 0> 0.166 216.6
YAlO3 (mp-3792) <1 1 0> <1 0 0> 0.170 221.2
PbSe (mp-2201) <1 0 0> <1 0 0> 0.180 153.1
SiC (mp-11714) <1 0 0> <1 1 0> 0.186 216.6
Te2Mo (mp-602) <1 0 0> <1 1 0> 0.188 216.6
YAlO3 (mp-3792) <1 0 0> <1 0 0> 0.189 323.3
TePb (mp-19717) <1 0 0> <1 0 0> 0.203 85.1
GaTe (mp-542812) <1 0 -1> <1 0 0> 0.204 153.1
ZrO2 (mp-2858) <0 0 1> <1 0 0> 0.207 136.1
WSe2 (mp-1821) <1 1 1> <1 1 1> 0.207 88.4
Up to 50 entries displayed.
minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Stiffness Tensor Cij (GPa)
654 151 151 0 0 0
151 654 151 0 0 0
151 151 654 0 0 0
0 0 0 124 0 0
0 0 0 0 124 0
0 0 0 0 0 124
Compliance Tensor Sij (10-12Pa-1)
1.7 -0.3 -0.3 0 0 0
-0.3 1.7 -0.3 0 0 0
-0.3 -0.3 1.7 0 0 0
0 0 0 8.1 0 0
0 0 0 0 8.1 0
0 0 0 0 0 8.1
Shear Modulus GV
175 GPa
Bulk Modulus KV
319 GPa
Shear Modulus GR
155 GPa
Bulk Modulus KR
319 GPa
Shear Modulus GVRH
165 GPa
Bulk Modulus KVRH
319 GPa
Elastic Anisotropy
0.63
Poisson's Ratio
0.28

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
60
U Values
--
Pseudopotentials
VASP PAW: N V_pv
Final Energy/Atom
-9.6788 eV
Corrected Energy
-19.3577 eV
-19.3577 eV = -19.3577 eV (uncorrected energy)

Detailed input parameters and outputs for all calculations


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ICSD IDs
  • 62468
  • 76950
  • 155292
  • 22321
  • 26949
  • 644856
  • 169819
  • 152808
  • 604393
  • 76526
  • 644847
  • 644849
  • 644850
  • 644852
  • 644853
  • 644854
  • 644855
  • 167800
  • 644857
  • 644859
  • 644862
  • 644863

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)