material

ZnS
ID:

mp-9946
DOI:

10.17188/1317004

Tags: Zinc sulfide Wurtzite 6H

Material Details

Final Magnetic Moment
0.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
NM
Formation Energy / Atom
-1.142 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.002 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
4.00 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
ZnS
Band Gap
2.035 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
P63mc [186]
Hall
P 6c 2c
Point Group
6mm
Crystal System
hexagonal

Electronic Structure

Topological data for ICSD ID 42798 from Topological Materials Database
Topological Classification
trivial*
Subclassification
LCEBR†
* trivial insulator or metal
† Linear Combination of Elementary Band Representations

Band Structure and Density of States

Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
substrate material substrate orientation film orientation elastic energy [meV] MCIA† [Å2]
Bi2Te3 (mp-34202) <0 0 1> <0 0 1> 0.000 51.4
Ag (mp-124) <1 1 1> <0 0 1> 0.000 90.0
MgAl2O4 (mp-3536) <1 1 1> <0 0 1> 0.000 115.7
KTaO3 (mp-3614) <1 1 0> <1 1 0> 0.002 252.3
BaF2 (mp-1029) <1 1 1> <0 0 1> 0.004 205.7
Au (mp-81) <1 1 1> <0 0 1> 0.011 90.0
BN (mp-984) <1 0 1> <0 0 1> 0.012 141.4
SrTiO3 (mp-4651) <1 0 1> <0 0 1> 0.016 321.4
WSe2 (mp-1821) <0 0 1> <0 0 1> 0.018 38.6
MoSe2 (mp-1634) <0 0 1> <0 0 1> 0.019 38.6
MgF2 (mp-1249) <1 1 0> <0 0 1> 0.020 102.9
InP (mp-20351) <1 1 1> <0 0 1> 0.022 244.3
GaN (mp-804) <0 0 1> <0 0 1> 0.023 115.7
InSb (mp-20012) <1 0 0> <0 0 1> 0.025 308.6
CeO2 (mp-20194) <1 1 1> <0 0 1> 0.025 51.4
Cu (mp-30) <1 1 1> <0 0 1> 0.025 90.0
NaCl (mp-22862) <1 1 1> <0 0 1> 0.027 167.1
CdTe (mp-406) <1 0 0> <0 0 1> 0.028 308.6
Si (mp-149) <1 1 1> <0 0 1> 0.028 51.4
CdS (mp-672) <1 0 1> <1 0 0> 0.033 291.3
BN (mp-984) <0 0 1> <0 0 1> 0.033 38.6
Te2W (mp-22693) <1 0 0> <1 0 0> 0.034 291.3
Ga2O3 (mp-886) <1 0 0> <1 1 1> 0.038 126.8
TiO2 (mp-390) <1 1 1> <0 0 1> 0.041 270.0
Ga2O3 (mp-886) <1 0 1> <0 0 1> 0.046 321.4
WS2 (mp-224) <0 0 1> <0 0 1> 0.048 115.7
CdWO4 (mp-19387) <0 1 1> <0 0 1> 0.048 321.4
MoS2 (mp-1434) <0 0 1> <0 0 1> 0.048 115.7
LaF3 (mp-905) <0 0 1> <0 0 1> 0.049 321.4
MgF2 (mp-1249) <1 1 1> <0 0 1> 0.058 90.0
ZrO2 (mp-2858) <0 1 0> <0 0 1> 0.069 308.6
Ni (mp-23) <1 1 0> <1 0 1> 0.071 295.8
YAlO3 (mp-3792) <0 1 1> <0 0 1> 0.077 334.3
GaSe (mp-1943) <1 0 0> <0 0 1> 0.083 205.7
LiF (mp-1138) <1 0 0> <0 0 1> 0.096 270.0
InSb (mp-20012) <1 1 0> <1 1 0> 0.097 126.2
Mg (mp-153) <0 0 1> <0 0 1> 0.101 115.7
TiO2 (mp-390) <0 0 1> <1 0 0> 0.106 72.8
ZnO (mp-2133) <1 1 0> <0 0 1> 0.114 334.3
CdTe (mp-406) <1 1 0> <1 1 0> 0.115 126.2
TeO2 (mp-2125) <0 1 0> <0 0 1> 0.128 205.7
C (mp-48) <1 1 0> <0 0 1> 0.131 270.0
Fe2O3 (mp-24972) <0 0 1> <0 0 1> 0.137 90.0
ZnO (mp-2133) <1 0 0> <0 0 1> 0.139 141.4
C (mp-66) <1 1 1> <0 0 1> 0.143 90.0
Ge (mp-32) <1 0 0> <0 0 1> 0.157 270.0
CdWO4 (mp-19387) <1 0 1> <0 0 1> 0.158 308.6
CaCO3 (mp-3953) <0 0 1> <0 0 1> 0.163 90.0
Al2O3 (mp-1143) <0 0 1> <0 0 1> 0.169 244.3
BaTiO3 (mp-5986) <1 1 0> <0 0 1> 0.172 141.4
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
118 51 39 0 0 0
51 118 39 0 0 0
39 39 131 0 0 0
0 0 0 28 0 0
0 0 0 0 28 0
0 0 0 0 0 34
Compliance Tensor Sij (10-12Pa-1)
10.9 -4 -2 0 0 0
-4 10.9 -2 0 0 0
-2 -2 8.8 0 0 0
0 0 0 35.1 0 0
0 0 0 0 35.1 0
0 0 0 0 0 29.8
Shear Modulus GV
34 GPa
Bulk Modulus KV
70 GPa
Shear Modulus GR
33 GPa
Bulk Modulus KR
70 GPa
Shear Modulus GVRH
33 GPa
Bulk Modulus KVRH
70 GPa
Elastic Anisotropy
0.15
Poisson's Ratio
0.29

Piezoelectricity

Reference for tensor and properties: Methodology
Piezoelectric Tensor eij (C/m2)
0.00000 0.00000 0.00000 0.00000 -0.03141 0.00000
0.00000 0.00000 0.00000 -0.03141 0.00000 0.00000
-0.05900 -0.05900 0.07169 0.00000 0.00000 0.00000
Piezoelectric Modulus ‖eij‖max
0.11001 C/m2
Crystallographic Direction vmax
0.00000
0.00000
-1.00000

Dielectric Properties

Reference for tensor and properties: Methodology
Dielectric Tensor εij∞ (electronic contribution)
5.87 0.00 0.00
0.00 5.87 0.00
0.00 0.00 5.91
Dielectric Tensor εij (total)
9.26 0.00 -0.00
0.00 9.26 -0.00
-0.00 -0.00 9.46
Polycrystalline dielectric constant εpoly∞
(electronic contribution)
5.89
Polycrystalline dielectric constant εpoly
(total)
9.33
Refractive Index n
2.43
Potentially ferroelectric?
Unknown

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
Si3NiP4 (mp-8311) 0.1891 0.000 3
Cu2SiTe3 (mp-675120) 0.1907 0.001 3
Li3SbS4 (mp-760415) 0.1839 0.005 3
GaCuTe2 (mp-3839) 0.1917 0.000 3
CrCd3Te4 (mp-1079533) 0.1868 0.115 3
CoCu2SiS4 (mp-556830) 0.1791 0.065 4
ZnCu2GeS4 (mp-6408) 0.1679 0.000 4
CoCu2SiS4 (mp-11769) 0.1758 0.065 4
ZnCu2SiTe4 (mp-1078498) 0.1828 0.000 4
LiIn2CuSe4 (mp-1079491) 0.1837 0.004 4
ZnS (mp-556989) 0.0035 0.001 2
ZnS (mp-554004) 0.0056 0.001 2
ZnS (mp-554713) 0.0035 0.001 2
ZnS (mp-554889) 0.0019 0.001 2
ZnS (mp-555628) 0.0034 0.001 2
C (mp-611448) 0.0218 0.143 1
C (mp-616440) 0.0275 0.141 1
C (mp-569517) 0.0269 0.145 1
C (mp-569567) 0.0210 0.144 1
Ge (mp-1091415) 0.0630 0.008 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1002/aoc.3414
ZnSO4 and thiourea (NH2CSNH2, 99.9%) were purchased from Aladdin, Shanghai. All chemicals were commercially available and used without further treatment. [...]
10.1002/crat.201400172
In this study, simple pneumatic spray pyrolysis set-up was used to obtain ZnS layers as described elsewhere [15]. The distance between the nozzle and the substrate was 29 cm. The nozzle diameter was 0 [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition ZnS.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA
Energy Cutoff
520 eV
# of K-points
None
U Values
--
Pseudopotentials
VASP PAW: Zn S
Final Energy/Atom
-3.5081 eV
Corrected Energy
-46.0777 eV
-46.0777 eV = -42.0970 eV (uncorrected energy) - 3.9808 eV (MP Anion Correction)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 42833
  • 42798
  • 43392
Submitted by
User remarks:
  • Zinc sulfide

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)