material

MnO
ID:

mp-999539
DOI:

10.17188/1317602

Tags: High pressure experimental phase Manganese oxide (1/1)

Material Details

Final Magnetic Moment
10.000 μB

Calculated total magnetic moment for the unit cell within the magnetic ordering provided (see below). Typically accurate to the second digit.
Magnetic Ordering
FM
Formation Energy / Atom
-1.938 eV

Calculated formation energy from the elements normalized to per atom in the unit cell.

Energy Above Hull / Atom
0.062 eV

The energy of decomposition of this material into the set of most stable materials at this chemical composition, in eV/atom. Stability is tested against all potential chemical combinations that result in the material's composition. For example, a Co2O3 structure would be tested for decomposition against other Co2O3 structures, against Co and O2 mixtures, and against CoO and O2 mixtures.

Density
4.11 g/cm3

The calculated bulk crystalline density, typically underestimated due calculated cell volumes overestimated on average by 3% (+/- 6%)

Decomposes To
MnO
Band Gap
0.000 eV

In general, band gaps computed with common exchange-correlation functionals such as the LDA and GGA are severely underestimated. Typically the disagreement is reported to be ~50% in the literature. Some internal testing by the Materials Project supports these statements; typically, we find that band gaps are underestimated by ~40%. We additionally find that several known insulators are predicted to be metallic.

Space Group

Hermann Mauguin
P63mc [186]
Hall
P 6c 2c
Point Group
6mm
Crystal System
hexagonal

Band Structure

Density of States
Warning! Semi-local DFT tends to severely underestimate bandgaps. Please see the wiki for more info.

sign indicates spin ↑ ↓

X-Ray Diffraction

    Select radiation source:
  • Cu
  • Ag
  • Mo
  • Fe

Calculated powder diffraction pattern; note that peak spacings may be affected due to inaccuracies in calculated cell volume, which is typically overestimated on average by 3% (+/- 6%)

X-Ray Absorption Spectra

FEFF XANES

Select an element to display a spectrum averaged over all sites of that element in the structure.

Apply Gaussian smoothing:

0 eV
3 eV
FWHM: 0 eV

Download spectra for every symmetrically equivalent absorption site in the structure.

Download FEFF Input parameters.

Warning: These results are intended to be semi-quantitative in that corrections, such as edge shifts and Debye-Waller damping, have not been included.

Substrates

Reference for minimal coincident interface area (MCIA) and elastic energy:
substrate orientation:
No elastic tensor calculated for this material, so elastic energies not avaialable. Sorting by MCIA instead.
substrate material substrate orientation film orientation MCIA† [Å2]
LaAlO3 (mp-2920) <1 0 0> <1 0 0> 286.2
LaAlO3 (mp-2920) <1 0 1> <1 1 1> 311.8
LaAlO3 (mp-2920) <0 0 1> <0 0 1> 72.8
AlN (mp-661) <0 0 1> <0 0 1> 72.8
AlN (mp-661) <1 0 1> <0 0 1> 124.8
AlN (mp-661) <1 0 0> <1 0 0> 171.7
AlN (mp-661) <1 1 0> <1 1 0> 165.2
AlN (mp-661) <1 1 1> <1 0 0> 57.2
CeO2 (mp-20194) <1 0 0> <1 0 0> 152.6
CeO2 (mp-20194) <1 1 0> <1 0 0> 171.7
CeO2 (mp-20194) <1 1 1> <0 0 1> 197.6
GaAs (mp-2534) <1 0 0> <0 0 1> 364.0
GaAs (mp-2534) <1 1 0> <1 0 1> 239.0
GaAs (mp-2534) <1 1 1> <0 0 1> 166.4
BaF2 (mp-1029) <1 0 0> <1 0 1> 239.0
BaF2 (mp-1029) <1 1 0> <0 0 1> 280.8
BaF2 (mp-1029) <1 1 1> <0 0 1> 197.6
GaN (mp-804) <1 0 0> <1 0 0> 133.6
GaN (mp-804) <1 0 1> <1 1 0> 132.2
GaN (mp-804) <1 1 1> <0 0 1> 145.6
GaN (mp-804) <0 0 1> <0 0 1> 135.2
GaN (mp-804) <1 1 0> <1 0 0> 57.2
SiO2 (mp-6930) <1 0 0> <1 1 0> 165.2
SiO2 (mp-6930) <1 0 1> <1 0 1> 173.8
SiO2 (mp-6930) <1 1 1> <1 1 0> 264.4
SiO2 (mp-6930) <0 0 1> <1 0 0> 190.8
SiO2 (mp-6930) <1 1 0> <1 0 0> 95.4
KCl (mp-23193) <1 1 0> <1 1 1> 242.5
KCl (mp-23193) <1 1 1> <0 0 1> 72.8
KCl (mp-23193) <1 0 0> <1 0 1> 239.0
DyScO3 (mp-31120) <0 1 1> <1 1 0> 165.2
InAs (mp-20305) <1 0 0> <0 0 1> 187.2
InAs (mp-20305) <1 1 0> <1 0 1> 260.8
InAs (mp-20305) <1 1 1> <0 0 1> 197.6
ZnSe (mp-1190) <1 1 0> <1 0 1> 239.0
CdS (mp-672) <0 0 1> <0 0 1> 135.2
CdS (mp-672) <1 0 1> <1 0 1> 304.2
CdS (mp-672) <1 1 0> <1 0 0> 152.6
LiF (mp-1138) <1 1 0> <0 0 1> 208.0
LiF (mp-1138) <1 1 1> <0 0 1> 197.6
Te2W (mp-22693) <0 1 0> <1 0 0> 209.9
Te2W (mp-22693) <1 0 0> <1 0 1> 195.6
DyScO3 (mp-31120) <0 0 1> <1 0 0> 95.4
DyScO3 (mp-31120) <0 1 0> <1 1 0> 132.2
DyScO3 (mp-31120) <1 0 0> <1 0 1> 239.0
DyScO3 (mp-31120) <1 1 0> <1 0 0> 190.8
DyScO3 (mp-31120) <1 1 1> <1 1 0> 297.4
ZnSe (mp-1190) <1 1 1> <0 0 1> 166.4
KTaO3 (mp-3614) <1 0 0> <0 0 1> 197.6
KTaO3 (mp-3614) <1 1 0> <0 0 1> 208.0
Up to 50 entries displayed.
†minimal coincident interface area.

Elasticity

Reference for tensor and properties:
Visualize with ELATE
Stiffness Tensor Cij (GPa)
129 87 54 0 0 0
87 129 54 0 0 0
54 54 136 0 0 0
0 0 0 36 0 0
0 0 0 0 36 0
0 0 0 0 0 21
Compliance Tensor Sij (10-12Pa-1)
14.7 -8.9 -2.3 0 0 0
-8.9 14.7 -2.3 0 0 0
-2.3 -2.3 9.1 0 0 0
0 0 0 28.1 0 0
0 0 0 0 28.1 0
0 0 0 0 0 47.2
Shear Modulus GV
32 GPa
Bulk Modulus KV
87 GPa
Shear Modulus GR
29 GPa
Bulk Modulus KR
86 GPa
Shear Modulus GVRH
30 GPa
Bulk Modulus KVRH
87 GPa
Elastic Anisotropy
0.50
Poisson's Ratio
0.34

Similar Structures beta feature

Explanation of dissimilarity measure: Documentation.
material dissimilarity Ehull # of elements
MnZn4O5 (mp-774024) 0.2234 0.011 3
MgSnN2 (mp-1029791) 0.1268 0.000 3
ZnSnN2 (mp-1029469) 0.2205 0.000 3
Mg2SbN3 (mp-1029378) 0.1593 0.000 3
Zn2SbN3 (mp-1029334) 0.2277 0.000 3
Li4Fe3CoO8 (mp-771610) 0.2621 0.068 4
LiCo7O7F (mp-764039) 0.2028 0.052 4
LiCo5O5F (mp-764225) 0.2277 0.061 4
Li4VGa3O8 (mp-772233) 0.2784 0.039 4
Li2ZnSnS4 (mp-555186) 0.2858 0.000 4
CoO (mp-561373) 0.0747 0.021 2
TbSe (mp-10645) 0.0342 0.527 2
CdO (mp-13119) 0.0383 0.007 2
ZrN (mp-13126) 0.0528 0.444 2
CoO (mp-19128) 0.0729 0.007 2
Ge (mp-1007760) 0.2726 0.020 1
Si (mp-165) 0.2788 0.011 1
C (mp-611426) 0.4176 0.144 1
C (mp-47) 0.2848 0.159 1
Ge (mp-1091415) 0.4175 0.022 1
Up to 5 similar elemental, binary, ternary, quaternary, etc. structures displayed (dissimilarity threshold 0.75). Ehull: energy above hull per atom [eV].

Synthesis Descriptions

10.1002/adem.201400077
KMnO4 and Na2SO4 (Aldrich) were used as starting materials for the electrosynthesis of MnO2. Commercial Ni plaques with 80% volume porosity and thickness of 1.8mm (Vale Company) were used as substrat [...]
10.1002/chem.201203553
Synthesis and morphological control: According to the synthetic process outlined in Figure1, as previously devised by our group, MnOOH nanowires were first prepared as the starting precursor for our [...]
chef hat mixing beaker

Explore more synthesis descriptions for materials of composition MnO.

Text computed by synthesisproject.org.

Calculation Summary

Elasticity

Methodology

Structure Optimization

Run Type
GGA+U
Energy Cutoff
520 eV
# of K-points
None
U Values
Mn: 3.9 eV
Pseudopotentials
VASP PAW: Mn_pv O
Final Energy/Atom
-7.7942 eV
Corrected Energy
-35.9431 eV
-35.9431 eV = -31.1768 eV (uncorrected energy) - 3.3617 eV (MP Advanced Correction) - 1.4046 eV (MP Anion Correction)

Detailed input parameters and outputs for all calculations

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ICSD IDs
  • 262928
Submitted by
User remarks:
  • High pressure experimental phase
  • Manganese oxide (1/1)

Displaying lattice parameters for primitive cell; note that calculated cell volumes are typically overestimated on average by 3% (+/- 6%). Note the primitive cell may appear less symmetric than the conventional cell representation (see "Structure Type" selector below the 3d structure)